TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation
IGBT-Modul
IGBT-Module
FZ1800R17HP4_B29
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues
Kollektor-Emitter-Sperrspannung
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
IC nom
ICRM
Ptot
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
1800
3600
11,5
ꢀ
ꢀ
ꢀ
V
A
A
Kollektor-Dauergleichstrom
TC = 100°C, Tvj max = 175°C
ContinuousꢀDCꢀcollectorꢀcurrent
PeriodischerꢀKollektor-Spitzenstrom
tP = 1 ms
Repetitiveꢀpeakꢀcollectorꢀcurrent
Gesamt-Verlustleistung
TC = 25°C, Tvj max = 175°C
Totalꢀpowerꢀdissipation
ꢀ kW
Gate-Emitter-Spitzenspannung
Gate-emitterꢀpeakꢀvoltage
VGES
+/-20
ꢀ
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emitterꢀsaturationꢀvoltage
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,90 2,25
2,30
2,40
V
V
V
VCE sat
Gate-Schwellenspannung
Gateꢀthresholdꢀvoltage
IC = 72,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,20 5,80 6,40
V
µC
Ω
Gateladung
Gateꢀcharge
19,0
1,1
InternerꢀGatewiderstand
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
Eingangskapazität
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
145
4,75
nF
nF
Rückwirkungskapazität
Reverseꢀtransferꢀcapacitance
Kollektor-Emitter-Reststrom
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
400 nA
Gate-Emitter-Reststrom
Gate-emitterꢀleakageꢀcurrent
Einschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,65
0,70
0,72
µs
µs
µs
Anstiegszeit,ꢀinduktiveꢀLast
Riseꢀtime,ꢀinductiveꢀload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,5 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,15
0,16
0,16
µs
µs
µs
tr
td off
tf
Abschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,25
1,35
1,40
µs
µs
µs
Fallzeit,ꢀinduktiveꢀLast
Fallꢀtime,ꢀinductiveꢀload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,27
0,41
0,46
µs
µs
µs
EinschaltverlustenergieꢀproꢀPuls
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 1800 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, di/dt = 12000 A/µs (Tvj = 150°C)Tvj = 125°C
RGon = 0,5 Ω
Tvj = 25°C
265
380
420
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
AbschaltverlustenergieꢀproꢀPuls
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 1800 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 0,8 Ω
Tvj = 25°C
470
620
660
mJ
mJ
mJ
Tvj = 150°C
Kurzschlußverhalten
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 10 µs, Tvj = 150°C
7500
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
proꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
9,55 K/kW
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
11,0
K/kW
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
TemperaturꢀimꢀSchaltbetrieb
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2016-01-19
revision:ꢀV3.1
2
