PZTA94
Preliminary
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PD
RATINGS
-400
-400
-6
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Power Dissipation(TA=25°C)
Collector Current
625
mW
mA
IC
-300
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=-100μA, IE=0
BVCEO IC=-1mA, IB=0
BVCES IC=-100μA, VBE=0
BVEBO IE=-100μA, IC=0
-400
-400
-400
-5
V
V
V
V
ICBO
ICES
IEBO
VCB=-300V, IE=0
VCE =-400V, VBE=0
VEB=-4V, IC=0
-100
-1
nA
μA
nA
Collector Cut-off Current
Emitter Cut-off Current
100
VCE=-10V, IC=-1mA
60
70
70
40
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
DC Current Gain(note)
hFE
300
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.20
-0.5
-0.75
7
Collector-Emitter Saturation Voltage
VCE(SAT
)
V
Base-Emitter Saturation Voltage
Output Capacitance
VBE(SAT) IC=-10mA, IB=-1mA
Cob VCB=-20V, IE=0, f=1MHz
V
pF
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R207-026.a
www.unisonic.com.tw
