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PZTM1101T/R

型号：

PZTM1101T/R

品牌：

NXP[ NXP ]

页数：

7 页

PDF大小：

36 K

下载PDF手册
DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
PZTM1101  
NPN transistor/Schottky-diode  
module  
1996 May 09  
Product specification  
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
FEATURES  
DESCRIPTION  
• Low output capacitance  
• Fast switching time  
Combination of an NPN transistor and a Schottky barrier diode in a plastic  
SOT223 package. PNP complement: PZTM1102.  
• Integrated Schottky protection  
diode.  
1
4
handbook, halfpage  
APPLICATIONS  
• High-speed switching for industrial  
applications.  
4
2
PINNING  
1
2
3
3
PIN  
DESCRIPTION  
anode Schottky  
Top view  
MAM236  
1
2
3
4
Marking code: TM1101.  
base  
emitter  
Fig.1 Simplified outline (SOT223) and symbol.  
collector, cathode Schottky  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
NPN transistor  
VCBO  
VCES  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
open emitter  
VBE = 0  
−
−
−
−
60  
V
V
V
40  
6
open collector  
200  
mA  
Schottky barrier diode  
VR  
IF  
continuous reverse voltage  
−
−
−
−
−
40  
1
V
forward current (DC)  
average forward current  
junction temperature  
A
IF(AV)  
Tj  
1
A
reverse current applied  
forward current applied  
125  
150  
°C  
°C  
Combined device  
Ptot  
Tamb  
Tstg  
Tj  
total power dissipation  
up to Tamb = 25 °C  
−
1.2  
W
operating ambient temperature  
storage temperature  
−55  
−55  
−
+150  
+150  
150  
°C  
°C  
°C  
junction temperature  
1996 May 09  
2
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
ELECTRICAL CHARACTERISTICS  
T
amb = 25 °C unless otherwise specified.  
SYMBOL PARAMETER  
NPN transistor  
V(BR)CBO collector-base breakdown voltage  
CONDITIONS  
MIN. MAX. UNIT  
open emitter; IC = 10 µA; IE = 0;  
60  
40  
6
−
−
−
V
V
V
Tamb = −55 to +150 °C; note 1  
V(BR)CES  
collector-emitter breakdown voltage open base; IC = 1 mA; VBE = 0;  
Tamb = −55 to +150 °C; note 1  
V(BR)EBO emitter-base breakdown voltage  
open collector; IE = 10 µA; IC = 0;  
Tamb = −55 to +150 °C; note 1  
ICES  
collector-emitter cut-off current  
emitter-base cut-off current  
VCE = 20 V; VBE = 0  
−
−
−
−
100  
50  
nA  
µA  
nA  
µA  
V
CE = 20 V; VBE = 0; Tamb = −55 to +150 °C  
VEB = 6 V; IC = 0  
EB = 6 V; IC = 0; Tamb = −55 to +150 °C  
collector-emitter saturation voltage note 1  
IC = 10 mA; IB = 1 mA  
IEBO  
50  
V
10  
VCEsat  
−
−
200  
300  
mV  
mV  
IC = 50 mA; IB = 3.2 mA  
collector-emitter saturation voltage Tamb = −55 to +150 °C; note 1  
IC = 10 mA; IB = 1 mA  
VCEsat  
VBEsat  
VBEsat  
−
−
250  
350  
mV  
mV  
IC = 50 mA; IB = 3.2 mA  
base-emitter saturation voltage  
base-emitter saturation voltage  
note 1  
IC = 10 mA; IB = 1 mA  
−
−
850  
950  
mV  
mV  
IC = 50 mA; IB = 5 mA  
Tamb = −55 to +150 °C; note 1  
IC = 10 mA; IB = 1 mA  
IC = 50 mA; IB = 5 mA  
IE = ie = 0; VCB = 5 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = 10 mA; VCE = 20 V; f = 100 MHz  
VCE = 1 V; note 1  
−
1000 mV  
1100 mV  
−
Cob  
Cib  
fT  
output capacitance  
input capacitance  
transition frequency  
DC current gain  
−
4
8
−
pF  
−
pF  
300  
MHz  
hFE  
IC = 0.1 mA  
40  
−
IC = 1 mA  
70  
−
IC = 10 mA  
100  
30  
300  
−
IC = 100 mA  
hFE  
DC current gain  
VCE = 1 V; Tamb = −55 to +150 °C; note 1  
IC = 10 mA  
60  
15  
500  
IC = 100 mA  
−
SWITCHING TIMES (see Figs 2 and 3)  
td  
tr  
delay time  
rise time  
VCC = 5 V  
1
5
ns  
ns  
ns  
ns  
IC = 50 mA  
Vi = 0 to 5 V  
16  
110  
70  
31  
ts  
tf  
storage time  
fall time  
310  
100  
1996 May 09  
3
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
Schottky barrier diode  
VF  
forward voltage  
IF = 100 mA; note 1  
−
−
−
−
−
−
330  
400  
500  
560  
300  
mV  
mV  
mV  
mV  
µA  
IF = 100 mA; Tamb = −55 to +150 °C; note 1  
IF = 1 A; note 1  
IF = 1 A; Tamb = −55 to +150 °C; note 1  
VR = 40 V; note 1  
IR  
reverse current  
VR = 40 V; Tj = 125 °C;  
35(2) mA  
Tamb = −55 to +150 °C; note 1  
IR  
reverse current  
VR = 10 V; note 1  
−
−
40  
µA  
VR = 10 V; Tj = 125 °C;  
15(2) mA  
Tamb = −55 to +150 °C; note 1  
Cj  
junction capacitance  
VR = 0 V; f = 1 MHz  
−
250  
pF  
Notes  
1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.  
2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal  
runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with  
forward voltage applied.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient (combined device) note 1  
100  
K/W  
Note  
1. Refer to SOT223 standard mounting conditions.  
1996 May 09  
4
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
GRAPHICAL DATA  
5 V  
handbook, halfpage  
INPUT  
handbook, halfpage  
V
= 5 V DC  
CC  
90 Ω  
(1%)  
V
i
0 V  
t
p
V
(pin 4)  
o
V
o
825 Ω (1%)  
5 V  
0 V  
10%  
90%  
V
DUT  
i
OUTPUT  
7.5 kΩ  
(5%)  
5.23 Ω  
(1%)  
90%  
10%  
t
t
f
d
MBH220  
t
t
r
s
t
MBH221  
t
on  
off  
tr < 5 ns (10% to 90%); tp = 1 µs; δ = 0.02; Zi = 50 Ω.  
ton = td + tr; toff = ts + tf.  
Fig.2 Switching times test circuit.  
Fig.3 Input and output waveforms.  
1996 May 09  
5
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
PACKAGE OUTLINE  
0.95  
0.85  
0.1 S  
S
seating plane  
0.32  
0.24  
6.7  
6.3  
3.1  
2.9  
B
M
0.2  
A
4
A
0.10  
0.01  
3.7  
3.3  
7.3  
6.7  
o
o
16  
max  
16  
1
2
3
o
10  
max  
0.80  
0.60  
1.80  
max  
M
2.3  
0.1  
B
(4x)  
MSA035 - 1  
4.6  
Dimensions in mm.  
Fig.4 SOT223.  
1996 May 09  
6
Philips Semiconductors  
Productspecification  
NPN transistor/Schottky-diode module  
PZTM1101  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 May 09  
7
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