M C C
TM
Micro Commercial Components
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
PZT2907A
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
PNP
•
·
·
·
·
·
·
Surface Mount SOT-223 Package
Capable of 1Watts of Power Dissipation
Ic:0.6A
Plastic-Encapsulate
Transistors
Marking:ZT2907A
Operating and Storage Junction Temperatures:-55oC to 150oC
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
•
Halogen free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates
·
SOT-223
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-10µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-10µAdc, IC=0)
Emitter Cutoff Current
-60
-60
-5.0
Vdc
Vdc
Vdc
nAdc
(VEB=-5Vdc, IC=0Vdc)
-50
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
-0.01
µAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
1.BASE
2.COLLECTOR
3.EMITTER
(IC=-0.1mAdc, VCE=--10Vdc)
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-150mAdc, VCE=-10Vdc)
(IC=-500mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
75
100
100
100
50
300
DIMENSIONS
MM
INCHES
MIN
6.30
VCE(sat)
DIM
A
MIN
.248
MAX
.264
MAX
6.70
NOTE
-0.4
-1.6
Vdc
Vdc
B
C
D
E
F
.130
.264
.001
.114
.146
.287
.004
.122
3.30
6.70
0.02
2.90
3.70
7.30
0.10
3.10
VBE(sat)
-1.3
-2.6
.091
2.30
G
- - -
.071
.014
---
---
0.23
0.75
1.80
0.35
- - -
SMALL-SIGNAL CHARACTERISTICS
H
J
.009
.030
fT
Current Gain-Bandwidth Product
(IC=-50mAdc, VCE=-20Vdc, f=-
100MHz)
200
MHz
Ccbo
Cibo
Output Capacitance
(VCB=-10Vdc, IE=0, f=1MHz)
Input Capacitance
(VEB=-2.0Vdc, IC=0, f=1MHz)
8.0
pF
pF
30.0
SWITCHING CHARACTERISTICS
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
12
30
300
65
ns
ns
ns
ns
IC=-150mA, IB1=-IB2=-15mA
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Revision: A
2014/11/21