找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

PZT2907AT3

型号:

PZT2907AT3

品牌:

ROCHESTER[ Rochester Electronics ]

页数:

4 页

PDF大小:

102 K

PZT2907AT1,  
SPZT2907AT1G  
Preferred Device  
PNP Silicon  
Epitaxial Transistor  
This PNP Silicon Epitaxial transistor is designed for use in linear  
and switching applications. The device is housed in the SOT-223  
package which is designed for medium power surface mount  
applications.  
http://onsemi.com  
Features  
SOT223  
CASE 318E  
STYLE 1  
NPN Complement is PZT2222AT1  
The SOT-223 package can be soldered using wave or reflow  
SOT-223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering eliminating  
the possibility of damage to the die.  
COLLECTOR  
2, 4  
1
BASE  
AECQ101 Qualified and PPAP Capable  
S Prefix for Automotive and Other Applications Requiring Unique  
3
Site and Control Change Requirements  
EMITTER  
PbFree Packages are Available*  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol Value  
Unit  
Vdc  
AYW  
P2F G  
G
V
V
V
60  
60  
CEO  
CBO  
EBO  
Vdc  
1
5.0  
600  
Vdc  
P2F  
A
Y
W
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
Collector Current Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation (Note 1)  
T = 25C  
A
P
D
1.5  
12  
W
mW/C  
ORDERING INFORMATION  
Thermal Resistance JunctiontoAmbient  
(Note 1)  
R
83.3  
C/W  
q
JA  
Device  
Package  
Shipping  
Lead Temperature for Soldering,  
0.0625from case  
T
L
PZT2907AT1  
PZT2907AT1G  
SOT223 1,000 / Tape & Reel  
260  
10  
C  
Time in Solder Bath  
Sec  
SOT223 1,000 / Tape & Reel  
(PbFree)  
Operating and Storage Temperature Range  
T , T  
65 to  
+150  
C  
J
stg  
SPZT2907AT1G SOT223 1,000 / Tape & Reel  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
PZT2907AT3  
SOT223 4,000 / Tape & Reel  
PZT2907AT3G  
SOT223 4,000 / Tape & Reel  
(PbFree)  
2
1. FR4 with 1 oz and 713 mm of copper area.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 9  
PZT2907AT1/D  
 
PZT2907AT1, SPZT2907AT1G  
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
60  
60  
5.0  
C
E
CollectorEmitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
C
B
EmitterBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
Vdc  
E
C
CollectorBase Cutoff Current  
(V = 50 Vdc, I = 0)  
I
nAdc  
nAdc  
nAdc  
CBO  
10  
50  
50  
CB  
E
CollectorEmitter Cutoff Current  
(V = 30 Vdc, V = 0.5 Vdc)  
I
CEX  
CE  
BE  
BaseEmitter Cutoff Current  
(V = 30 Vdc, V = 0.5 Vdc)  
I
BEX  
CE  
BE  
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
h
FE  
(I = 0.1 mAdc, V = 10 Vdc)  
75  
100  
100  
100  
50  
C
CE  
(I = 1.0 mAdc, V = 10 Vdc)  
C
CE  
CE  
CE  
CE  
(I = 10 mAdc, V = 10 Vdc)  
C
(I = 150 mAdc, V = 10 Vdc)  
300  
C
(I = 500 mAdc, V = 10 Vdc)  
C
Collector-Emitter Saturation Voltages  
(I = 150 mAdc, I = 15 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
0.4  
1.6  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
Base-Emitter Saturation Voltages  
(I = 150 mAdc, I = 15 mAdc)  
V
BE(sat)  
1.3  
2.6  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
DYNAMIC CHARACTERISTICS  
Current-Gain Bandwidth Product  
f
MHz  
pF  
T
(I = 50 mAdc, V = 20 Vdc, f = 100 MHz)  
200  
C
CE  
Output Capacitance  
C
C
c
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
8.0  
30  
CB  
E
Input Capacitance  
pF  
e
(V = 2.0 Vdc, I = 0, f = 1.0 MHz)  
EB  
C
SWITCHING TIMES  
Turn-On Time  
Delay Time  
t
45  
10  
ns  
ns  
on  
(V = 30 Vdc, I = 150 mAdc,  
CC  
C
t
d
I
= 15 mAdc)  
B1  
Rise Time  
t
r
40  
Turn-Off Time  
Storage Time  
Fall Time  
t
100  
80  
off  
(V = 6.0 Vdc, I = 150 mAdc,  
CC  
C
t
s
I
B1  
= I = 15 mAdc)  
B2  
t
f
30  
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
http://onsemi.com  
2
 
PZT2907AT1, SPZT2907AT1G  
-ꢀ30 V  
+15 V  
-ꢀ6.0 V  
INPUT  
INPUT  
200  
1.0 k  
37  
Z = 50 W  
o
PRF = 150 Hz  
Z = 50 W  
o
PRF = 150 Hz  
RISE TIME 2.0 ns  
RISE TIME 2.0 ns  
TO OSCILLOSCOPE  
RISE TIME 5.0 ns  
TO OSCILLOSCOPE  
RISE TIME 5.0 ns  
1.0 k  
1.0 k  
0
0
-ꢀ16 V  
-ꢀ30 V  
50  
50  
1N916  
200 ns  
200 ns  
Figure 1. Delay and Rise  
Time Test Circuit  
Figure 2. Storage and Fall  
Time Test Circuit  
TYPICAL ELECTRICAL CHARACTERISTICS  
1000  
100  
10  
1000  
T = 125C  
J
T = 25C  
J
100  
T = -ꢁ55C  
J
V
= -ꢁ20 V  
CE  
T = 25C  
J
10  
-1.0  
-ꢁ0.1  
-1.0  
-10  
-100  
-1000  
-10  
-100  
-1000  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 3. DC Current Gain  
Figure 4. Current Gain Bandwidth Product  
-1.0  
-ꢁ0.8  
-ꢁ0.6  
30  
T = 25C  
J
20  
V
@ I /I = 10  
C B  
BE(sat)  
C
eb  
10  
V
@ V = -10 V  
CE  
BE(on)  
7.0  
5.0  
-ꢁ0.4  
-ꢁ0.2  
0
C
cb  
3.0  
2.0  
V
@ I /I = 10  
C B  
CE(sat)  
-100-ꢁ200 -ꢁ500  
-ꢁ0.1 -ꢁ0.2 -ꢁ0.5 -1.0 -ꢁ2.0 -ꢁ5.0 -10 -ꢁ20 -ꢁ50  
-ꢁ0.1 -ꢁ0.2 -ꢁ0.3 -ꢁ0.5 -ꢁ0.7 -1.0 -ꢁ2.0 -ꢁ3.0 -ꢁ5.0 -ꢁ7.0 -10 -ꢁ20 -ꢁ30  
I , COLLECTOR CURRENT (mA)  
C
REVERSE VOLTAGE (VOLTS)  
Figure 5. “ON” Voltage  
Figure 6. Capacitances  
http://onsemi.com  
3
PZT2907AT1, SPZT2907AT1G  
PACKAGE DIMENSIONS  
SOT223 (TO261)  
CASE 318E04  
ISSUE N  
D
b1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCH.  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
−−−  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0.20  
1.50  
6.70  
0  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
−−−  
1.75  
7.00  
MAX  
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
−−−  
2.00  
7.30  
10  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.008  
0.060  
0.264  
0  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
−−−  
H
E
E
1
3
b
e1  
e
0.069  
0.276  
0.078  
0.287  
10  
C
q
H
E
A
q
0.08 (0003)  
STYLE 1:  
A1  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
L
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
PZT2907AT1/D  
厂商 型号 描述 页数 下载

SECOS

PZT13003 1.5A , 700V NPN硅中功率晶体管[ 1.5A , 700V NPN Silicon Medium Power Transistor ] 2 页

SECOS

PZT157 PNP晶体管的硅平面高性能晶体管[ PNP Transistor Silicon Planar High Performance Transistor ] 2 页

SECOS

PZT158 硅平面高电流晶体管[ Silicon Planar High Current Transistor ] 2 页

WEITRON

PZT159 PNP硅平面高电流晶体管[ PNP Silicon Planar High Current Transistor ] 4 页

SECOS

PZT159 高电流晶体管[ High Current Transistor ] 2 页

UTC

PZT1816 HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816G-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816L-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816_15 [ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

SECOS

PZT194 硅平面中功率晶体管[ Silicon Planar Medium Power Transistor ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.215848s