技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ1200R17HP4_B2
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
IC nom
ICRM
Ptot
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
1200
2400
8,60
ꢀ
ꢀ
ꢀ
V
A
A
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 100°C, Tvj max = 175°C
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ kW
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 1200 A, VGE = 15 V
IC = 1200 A, VGE = 15 V
IC = 1200 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,90 2,25
2,30
2,40
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 48,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,2
5,8
12,5
1,6
97,0
3,20
ꢀ
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 0,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,68
0,71
0,72
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 0,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,12
0,13
0,13
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,10
1,20
1,25
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,35
0,52
0,56
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, di/dt = 10500 A/µs (Tvj = 150°C)Tvj = 125°C
RGon = 0,2 Ω
Tvj = 25°C
170
245
275
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 0,8 Ω
Tvj = 25°C
320
415
440
mJ
mJ
mJ
ꢀ
ꢀ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
ꢀ
tP ≤ 10 µs, Tvj = 150°C
5000
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
17,5 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
16,0
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀIB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
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