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PZTA14

型号:

PZTA14

描述:

NPN达林顿晶体管[ NPN Darlington Transistor ]

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

3 页

PDF大小:

58 K

Discr ete P OWER & Sign a l  
Tech n ologies  
MPSA14  
MMBTA14  
PZTA14  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1N  
B
SOT-223  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 1.0 A. Sourced from  
Process 05.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
V
V
V
A
30  
10  
Collector Current - Continuous  
1.2  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA14  
*MMBTA14  
**PZTA14  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  
A14, Rev B  
NPN Darlington Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CES  
Collector-Emitter Breakdown Voltage  
30  
V
I = 100 A, I = 0  
µ
C
B
ICBO  
Collector-Cutoff Current  
Emitter-Cutoff Current  
VCB = 30 V, IE = 0  
VEB = 10 V, IC = 0  
100  
100  
nA  
nA  
IEBO  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 10 mA, VCE = 5.0 V  
IC = 100 mA, VCE = 5.0 V  
IC = 100 mA, IB = 0.1 mA  
10,000  
20,000  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.5  
2.0  
V
V
VCE(sat)  
VBE(on)  
IC = 100 mA, VCE = 5.0 V  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 10 mA, VCE = 5 V,  
f = 100 MHz  
125  
MHz  
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
250  
1.6  
1.2  
0.8  
0.4  
0
β
= 1000  
VCE = 5V  
200  
150  
100  
50  
125 °C  
- 40 ºC  
25 °C  
25°C  
125 ºC  
- 40 °C  
0
0.001  
0.01  
0.1  
1
1
10  
100  
1000  
IC - COLLECTOR CURRENT (A)  
I C - COLLECTOR CURRENT (mA)  
Base Emitter ON Voltage vs  
Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
2
2
1.6  
1.2  
0.8  
0.4  
0
β
= 1000  
1.6  
1.2  
0.8  
0.4  
0
- 40 ºC  
- 40 ºC  
25 °C  
25 °C  
125 ºC  
125 ºC  
VCE= 5V  
1
10  
100  
1000  
1
10  
100  
1000  
IC - COLLECTOR CURRENT (mA)  
IC - COLLECTOR CURRENT (mA)  
NPN Darlington Transistor  
(continued)  
Typical Characteristics (continued)  
Collector-Emitter Breakdown  
Voltage with Resistance  
Between Emitter-Base  
Collector-Cutoff Current  
vs Ambient Temperature  
100  
62.5  
62  
VCB = 30V  
10  
1
61.5  
61  
60.5  
60  
0.1  
0.01  
59.5  
0.1  
25  
50  
75  
100  
125  
1
10  
100  
1000  
TA- AMBIENT TEMPERATURE (ºC)  
RESISTANCE (k)  
Input and Output Capacitance  
vs Reverse Voltage  
Gain Bandwidth Product  
vs Collector Current  
50  
40  
30  
20  
10  
0
f = 1.0 MHz  
V
= 5V  
ce  
20  
10  
5
Cib  
Cob  
2
0.1  
1
10  
100  
1
10  
20  
50  
100 150  
V
- COLLECTOR VOLTAGE(V)  
IC- COLLECTOR CURRENT (mA)  
ce  
Power Dissipation vs  
Ambient Temperature  
1
SOT-223  
0.75  
TO-92  
0.5  
0.25  
0
SOT-23  
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
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