Discrete POWER & Signal
Technologies
MPSA06
MMBTA06
PZTA06
C
C
E
E
C
B
TO-92
C
B
SOT-23
Mark: 1G
B
SOT-223
E
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
4.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA06
*MMBTA06
**PZTA06
PD
Total Device Dissipation
625
5.0
350
2.8
1,000
8.0
mW
°
mW/ C
°
Derate above 25 C
Thermal Resistance, Junction to Case
83.3
°
Rθ
C/W
JC
Thermal Resistance, Junction to Ambient
200
357
125
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
