Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V(BR)CBO collector-base breakdown
voltage
open emitter; IC = −10 µA; IE = 0;
Tamb = −55 to +150 °C; note 1
−40
−
−
−
V
V
V
V(BR)CES collector-emitter
breakdown voltage
open base; IC = −1 mA; VBE = 0;
Tamb = −55 to +150 °C; note 1
−40
−6
−
V(BR)EBO emitter-base breakdown
voltage
open collector; IE = −10 µA; IC = 0;
T
amb = −55 to +150 °C; note 1
ICES
collector-emitter cut-off
current
VCE = −20 V; VBE = 0
100
50
nA
µA
nA
µA
VCE = −20 V; VBE = 0; Tamb = −55 to +150 °C −
IEBO
emitter-base cut-off current VEB = −6 V; IC = 0
VEB = −6 V; IC = 0; Tamb = −55 to +150 °C
−
−
50
10
VCEsat
collector-emitter saturation note 1
voltage
IC = −10 mA; IB = −1 mA
−
−
−200
−300
mV
mV
IC = −50 mA; IB = −3.2 mA
VCEsat
VBEsat
VBEsat
collector-emitter saturation Tamb = −55 to +150 °C; note 1
voltage
IC = −10 mA; IB = −1 mA
−
−
−250
−350
mV
mV
IC = −50 mA; IB = −3.2 mA
base-emitter saturation
voltage
note 1
IC = −10 mA; IB = −1 mA
−
−
−850
−950
mV
mV
IC = −50 mA; IB = −5 mA
Tamb = −55 to +150 °C; note 1
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −5 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −10 mA; VCE = −20 V; f = 100 MHz
VCE = −1 V; note 1
base-emitter saturation
voltage
−
−1.0
−1.1
4.5
10
V
−
V
Cob
Cib
fT
output capacitance
input capacitance
transition frequency
DC current gain
−
pF
pF
MHz
−
250
−
hFE
IC = −0.1 mA
40
−
IC = −1 mA
70
−
IC = −10 mA
100
30
300
−
IC = −100 mA
hFE
DC current gain
VCE = −1 V; Tamb = −55 to +150 °C; note 1
IC = −10 mA
60
15
500
IC = −100 mA
−
SWITCHING TIMES (see Figs 2 and 3)
td
tr
delay time
rise time
VCC = 5 V
3
7
ns
ns
ns
ns
IC = 50 mA
Vi = 0 to 5 V
13
200
50
23
380
80
ts
tf
storage time
fall time
1996 May 09
3
