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IXYH50N65C3H1

型号：

IXYH50N65C3H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

252 K

下载PDF手册
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Sonic  
Diode  
VCES = 650V  
IC110 = 50A  
VCE(sat)  2.10V  
tfi(typ) = 27ns  
IXYH50N65C3H1  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-247AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
130  
50  
40  
A
A
A
A
G = Gate  
E = Emitter  
C
Collector  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
Tab = Collector  
250  
IA  
EAS  
TC = 25°C  
TC = 25°C  
20  
A
300  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
Clamped Inductive Load  
ICM = 100  
A
μs  
W
(RBSOA)  
VCE VCES  
Optimized for 20-60kHz Switching  
Square RBSOA  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
Avalanche Rated  
(SCSOA)  
RG = 82, Non Repetitive  
Short Circuit Capability  
International Standard Package  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Advantages  
-55 ... +175  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Applications  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
50 A  
mA  
100 nA  
High Frequency Power Inverters  
TJ = 150C  
TJ = 150C  
3
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.74  
2.00  
2.10  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100572B(7/14)  
IXYH50N65C3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
19  
28  
S
Cies  
Coes  
Cres  
2346  
230  
50  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
80  
15  
40  
nC  
nC  
nC  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
22  
35  
ns  
ns  
1 - Gate  
2,4 - Collector  
3 - Emitter  
Inductive load, TJ = 25°C  
IC = 36A, VGE = 15V  
1.30  
80  
mJ  
ns  
VCE = 400V, RG = 5  
27  
ns  
Note 2  
Eof  
0.37  
mJ  
f
td(on)  
tri  
23  
33  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.70  
100  
42  
mJ  
ns  
VCE = 400V, RG = 5  
ns  
Note 2  
Eoff  
0.56  
mJ  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.21  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
2.15  
IRM  
trr  
TJ = 150°C  
TJ = 150°C  
25  
120  
A
ns  
IF = 30A, VGE = 0V,  
-diF/dt = 500A/μs, VR = 300V  
RthJC  
0.60 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH50N65C3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
280  
240  
200  
160  
120  
80  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
14V  
10V  
9V  
13V  
12V  
11V  
10V  
8V  
7V  
40  
9V  
8V  
0
0
0
0.5  
1
1.5  
2
2.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
I
= 54A  
C
9V  
8V  
I
= 36A  
C
7V  
6V  
I
= 18A  
100  
C
0
-50  
-25  
0
25  
50  
75  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I
= 54A  
C
T
= 150ºC  
25ºC  
J
- 40ºC  
36A  
18A  
4
5
6
7
8
9
10  
11  
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH50N65C3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
IC = 36A  
IG = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
100  
80  
C
ies  
60  
C
oes  
res  
40  
T
J
= 150ºC  
20  
C
R
G
= 5  
Ω
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
500  
600  
700  
400
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
a
a s s s  
1000  
100  
10  
0.4  
0.1  
V
Limit  
CE(sat)  
25µs  
100µs  
1
1ms  
T = 175ºC  
J
0.1  
0.01  
T
C
= 25ºC  
10ms  
Single Pulse  
0.01  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N65C3H1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.6  
3.0  
2.4  
1.8  
1.2  
0.6  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
E
R
E
on - - - -  
E
E
on - - - -  
off  
off  
= 5  
V
= 15V  
GE  
Ω ,  
G
T
J
= 150ºC , V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 150ºC  
I
= 54A  
C
T
J
= 25ºC  
I
= 36A  
C
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
5
10  
15  
20  
25  
30  
35  
40  
45  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
480  
400  
320  
240  
160  
80  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
t f i  
t
d(off) - - - -  
on - - - -  
off  
= 5  
R
VGE = 15V  
Ω ,  
T = 150ºC, V = 15V  
J GE  
G
VCE = 400V  
V
= 400V  
CE  
I
= 54A  
C
I
= 36A  
C
I
= 54A  
C
IC = 36A  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
70  
60  
50  
40  
30  
20  
10  
120  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
130  
120  
110  
100  
90  
t f i  
t
t f i  
t
d(off) - - - -  
d(off) - - - -  
110  
100  
90  
R
G
= 5 , V = 15V  
R
G
= 5 , V = 15V  
Ω
Ω
GE  
GE  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 36A  
C
T
J
= 150ºC  
80  
80  
T
J
= 25ºC  
70  
I
= 54A  
C
70  
60  
60  
50  
25  
50  
75  
100  
125  
150  
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
TJ - Degrees Centigrade  
IC - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH50N65C3H1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
70  
60  
50  
40  
30  
20  
10  
0
30  
28  
26  
24  
22  
20  
18  
16  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
t r i  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω
GE  
T = 150ºC, V = 15V  
J
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T = 150ºC  
J
I
= 36A  
C
60  
T = 25ºC  
J
I
= 54A  
C
40  
20  
5
10  
15  
20  
25  
30  
35  
40  
45  
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 22. Maximum Peak Load Current vs. Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
27  
26  
25  
24  
23  
22  
21  
20  
19  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 54A  
C
Triangular Wave  
T = 150ºC  
J
T
C
= 75ºC  
I
= 36A  
C
V
V
= 400V  
= 15V  
CE  
GE  
R
G
= 5ꢀ  
Square Wave  
Duty Cycle = 50%  
25  
50  
75  
100  
125  
150  
10  
100  
1,000  
TJ - Degrees Centigrade  
- KiloHertz  
fmax  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N65C3H1  
Fig. 23. Forward Current vs. Forward Voltage  
Fig. 24. Reverse Recovery Charge QRR vs. -diF/dt  
100  
80  
60  
40  
20  
0
2.4  
2.2  
2
T
= 150ºC  
= 300V  
VJ  
I
= 50A  
F
V
R
T
VJ  
= 25ºC  
150ºC  
1.8  
1.6  
1.4  
1.2  
1
30A  
10A  
0.8  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
-di /d  
VF  
t - A/µs  
- Volts  
F
t
Fig. 26. Recover Time tRR vs. -diF/d  
t
Fig. 25. Peak Reverse Current IRM vs. -diF/d  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
T
= 150ºC  
V = 300V  
R
T
= 150ºC  
VJ  
VJ  
I
= 50A  
30A  
V
= 300V  
F
R
10A  
I F = 50A  
60  
30A  
10A  
40  
20  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
-diF/dt - A/µs  
-di /d  
t - A/µs  
F
Fig. 28. Dynamic Parameters QRR, IRM vs.  
Virtual Junction Temperature TVJ  
t
Fig. 27. Recovery Energy EREC vs. -diF/d  
1.20  
1.00  
0.80  
0.60  
0.40  
0.20  
500  
450  
400  
350  
300  
250  
200  
150  
100  
V
= 300V  
R
T
= 150ºC  
= 300V  
VJ  
I
F
= 50A  
I
=50A  
F
V
R
-dI /dt = 900A/µs  
F
30A  
10A  
K
I
RM  
F
K
Q
RR  
F
0
20  
40  
60  
80  
100  
120  
140  
160  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
-diF  
d
TVJ - Degrees Centigrade  
/ t - A/µs  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH50N65C3H1  
Fig. 29. Maximum Transient Thermal Impedance (Diode)  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_50N65C3(5D)8-09-13/DMHP19-067F_4-03-14  
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