IXYK120N120B3
IXYX120N120B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264P Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
40
70
S
Cies
Coes
Cres
9800
567
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
215
Qg(on)
400
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
70
190
nC
nC
td(on)
tri
Eon
td(off)
tfi
30
54
ns
ns
Terminals:
1
= Gate
2,4 = Collector
Emitter
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
3
=
9.7
mJ
ns
340
260
21.5
VCE = 0.8 • VCES, RG = 1
ns
Note 2
Eof
mJ
f
td(on)
tri
29
55
ns
ns
Inductive load, TJ = 150°C
IC = 100A, VGE = 15V
Eon
td(off)
tfi
14.7
420
406
27.9
mJ
ns
VCE = 0.8 • VCES, RG = 1
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.10 °C/W
°C/W
0.15
PLUS247TM Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
