请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZ1800R17KF6CB2V

型号：

FZ1800R17KF6CB2V

描述：

IGBT模块\n[ IGBT Module ]

品牌：

ETC[ ETC ]

页数：

8 页

PDF大小：

144 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
Tvj = 25°C  
C = 80 °C  
VCES  
1700  
V
T
IC,nom.  
IC  
1800  
2900  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
3600  
13,9  
+/- 20V  
1800  
3600  
850  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
tp = 1 ms  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
4
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
C = 1800A, VGE = 15V, Tvj = 25°C  
VCE sat  
2,6  
3,1  
3,1  
3,6  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1800A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 120mA, VCE = VGE, Tvj = 25°C  
VGE = -15V ... +15V  
VGE(th)  
4,5  
5,5  
22  
118  
6
6,5  
V
Gateladung  
gate charge  
QG  
µC  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
nF  
VCE = 1700V, VGE = 0V, Tvj = 25°C  
5
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
400  
nA  
prepared by: A. Wiesenthal  
date of publication: 28.05.2001  
revision: 1 (preliminary)  
approved by: Christoph Lübke; 11.06.2001  
1(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
C = 1800A, VCE = 900V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
VGE = ±15V, RG = 0,82W, Tvj = 25°C  
VGE = ±15V, RG =0,82W, Tvj = 125°C  
0,3  
0,3  
µs  
µs  
I
C = 1800A, VCE = 900V  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
VGE = ±15V, RG = 0,82W, Tvj = 25°C  
VGE = ±15V, RG = 0,82W, Tvj = 125°C  
0,2  
0,2  
µs  
µs  
I
C = 1800A, VCE = 900V  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
VGE = ±15V, RG = 0,82W, Tvj = 25°C  
VGE = ±15V, RG = 0,82W, Tvj = 125°C  
1,3  
1,3  
µs  
µs  
I
C = 1800A, VCE = 900V  
VGE = ±15V, RG = 0,82W, Tvj = 25°C  
GE = ±15V, RG = 0,82W, Tvj = 125°C  
C = 1800A, VCE = 900V, VGE = 15V  
RG = 0,82W, Tvj = 125°C, LS = 50nH  
C = 1800A, VCE = 900V, VGE = 15V  
RG = 0,82W, Tvj = 125°C, LS = 50nH  
P £ 10µsec, VGE £ 15V  
Vj£125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt  
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
0,15  
0,16  
µs  
µs  
V
I
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
570  
725  
mWs  
mWs  
I
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
t
Kurzschlußverhalten  
SC Data  
ISC  
T
7200  
10  
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
pro Zweig / per arm  
0,06  
mW  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
IF = 1800A, VGE = 0V, Tvj = 25°C  
VF  
IRM  
Qr  
2,1  
2,1  
2,5  
2,5  
V
V
Durchlaßspannung  
forward voltage  
IF = 1800A, VGE = 0V, Tvj = 125°C  
IF = 1800A, - diF/dt = 10800A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
Rückstromspitze  
peak reverse recovery current  
1580  
1860  
A
A
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 1800A, - diF/dt =10800A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
Sperrverzögerungsladung  
recovered charge  
340  
630  
µAs  
µAs  
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 1800A, - diF/dt = 10800A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
190  
370  
mWs  
mWs  
VR = 900V, VGE = -10V, Tvj = 125°C  
2(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
0,009  
0,017  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per module  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCK  
0,006  
K/W  
°C  
lPaste = 1 W/m*K  
/
lgrease = 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
150  
Betriebstemperatur  
operation temperature  
Tvj op  
-40  
-40  
125  
125  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
internal insulation  
AlN  
32  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
20  
CTI  
>400  
comperative tracking index  
M1  
M2  
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
8 - 10  
Gewicht  
weight  
G
1500  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
VGE = 15V  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
Tvj = 25°C  
Tvj = 125°C  
400  
0
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
Tvj = 125°C  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
vGE = 20V  
vGE = 15V  
vGE = 12V  
vGE = 10V  
vGE = 9V  
vGE = 8V  
400  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
4(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 20V  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
Tvj = 25°C  
Tvj = 125°C  
400  
0
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
IF = f (VF)  
Forward characteristic of inverse diode (typical)  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
Tvj = 25°C  
Tvj = 125°C  
400  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
VF [V]  
5(8)  
FZ1800R17KF6C B2_V.xls  
                                                                                                                                                           
                                                                                                                                                           
                                                                                                               
                                                                                                               
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
Rgon = Rgoff =0,82 9, VCE = 900V, Tj = 125°C, VGE = ± 15V  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
Eoff  
Eon  
Erec  
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 1200A , VCE = 900V , Tj = 125°C, VGE = ± 15V  
2500  
Eon  
Eoff  
Erec  
2000  
1500  
1000  
500  
0
0
1
2
3
4
5
6
7
RG [9]  
6(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
vorläufige Daten  
preliminary data  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
Zth; Diode  
Zth; IGBT  
0,001  
0,001  
0,01  
0,1  
1
10  
100  
t [sec]  
1
2
3
4
i
: IGBT  
: IGBT  
: Diode  
: Diode  
0,865  
0,003  
1,67  
4,26  
0,05  
1,8  
2,08  
0,95  
3,11  
0,75  
ri [K/kW]  
JE [sec]  
0,1  
9,11  
3,11  
0,45  
ri [K/kW]  
0,003  
0,045  
JE [sec]  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA)  
Rg = 0,82 Ohm, Tvj = 125°C  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
iC; Chip  
iC; Modul  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
VCE [V]  
7(8)  
FZ1800R17KF6C B2_V.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 17 KF6C B2  
Äußere Abmessungen / external dimensions  
8(8)  
FZ1800R17KF6C B2_V.xls  
厂商 型号 描述 页数 下载

ETC

 		FZ1000R25KF1 IGBT模块\n[ IGBT Module ] 9 页

INFINEON

 		FZ1000R33HE3 IHM -B模块，具有快速海沟/场终止IGBT3和发射Controlled3二极管[ IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode ] 9 页

INFINEON

 		FZ1000R33HE3B60BPSA1 [ Insulated Gate Bipolar Transistor, ] 9 页

INFINEON

 		FZ1000R33HL3 IHM -B模块海沟/场终止IGBT3和发射Controlled3二极管[ IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled3 diode ] 9 页

INFINEON

 		FZ1000R33HL3B60BOSA1 [ Insulated Gate Bipolar Transistor, ] 9 页

INFINEON

 		FZ1000R33HL3BPSA1 [ Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-7 ] 9 页

ETC

 		FZ100A05KN 晶体管| IGBT | N -CHAN | 500V V（ BR ） CES | 100A I（C ） | MODULE -Q\n[ TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 100A I(C) | MODULE-Q ] 2 页

ETC

 		FZ100A06KL 晶体管| IGBT功率模块|独立| 600V V（ BR ） CES | 100A I（C ）\n[ TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C) ] 1 页

ETC

 		FZ1050R12K4 IGBT模块\n[ IGBT Module ] 3 页

GOOD-ARK

 		FZ1110 [ Surface Mount Zener Diodes ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.413215s