PZT955
PNP Transistor
Electrical Characteristics (TA=25°C unless otherwise noted）
Parameter
Symbol
Conditions
IC=-0.1mA, IE=0
Min.
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
V(BR)CBO
-180
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
IC=-10mA, IB=0
-140
-
-
-
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
ICBO
IE=-0.1mA, IC=0
-6
-
V
VCB=-150V, IE=0
VEB=-6V, IC=0
-
-
-50
-10
-
nA
nA
-
IEBO
-
-
HFE(1)
HFE(2)
HFE(3)
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-3A
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-5V, IC=-3A
100
-
DC Current Gain
100
-
300
-
-
75
-
-
-
-
-60
-120
-150
-370
-1.11
-0.95
-
mV
mV
mV
mV
V
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-
-
Base-Emitter Saturation Voltage
Base-Emitter Voltage
VBE(sat)
VBE
fT
-
-
-
-
V
VCE=-10V,IC=-100mA,
f=50MHz
VCB=-20V, IE=0,
f=1MHz
Transition Frequency
-
70
40
68
1030
MHz
pF
nS
nS
Collector Output Capacitance
Cob
ton
-
-
-
-
VCC=-50V, IC=-1A,
IB1= IB2=-100mA
Switching Times
toff
-
-
Typical Electrical Characteristic Curves
hFE —— IC
Static Characteristic
400
350
300
250
200
150
100
50
-2.5
VCE=-5V
COMMON
EMITTER
Ta=25℃
-10mA
-9mA
--8mA
-7mA
-2.0
-1.5
-1.0
-0.5
-0.0
Ta=100 o
C
-6mA
-5mA
-4mA
-3mA
-2mA
Ta=25 o
C
IB=-1mA
-1
-10
-100
-1000
-4000
-0
-1
-2
-3
-4
-5
-6
-7
-8
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
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