PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
Power Dissipation
-150
V
-5
V
-600
mA
W
PD
2
℃
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
℃
TSTG
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
MIN
-160
-150
-5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
IE=10μA, IC=0
VCB=120V, IE=0
VBE=-3V, IC=0
VCE=-5V, IC=-1mA
V
ICBO
-50
-50
nA
nA
Emitter Cut-off Current
IEBO
80
80
80
DC Current Gain(note)
hFE
V
V
CE=-5V, IC=-10mA
CE=-5V, IC=-50mA
400
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.2
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VBE(SAT)
-1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
400
6.0
MHz
pF
COB
Noise Figure
NF
8
dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-013.B
