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PZTA63S62Z

型号:

PZTA63S62Z

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

3 页

PDF大小:

39 K

MPSA63  
MMBTA63  
PZTA63  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 2U  
B
SOT-223  
E
PNP Darlington Transistor  
This device is designed for applications requiring extremely high  
current gain at currents to 800 mA. Sourced from Process 61.  
See MPSA64 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
30  
V
V
V
A
Collector-Base Voltage  
30  
10  
Emitter-Base Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.2  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA63  
*MMBTA63  
**PZTA63  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
A63, Rev A  
1997 Fairchild Semiconductor Corporation  
PNP Darlington Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CES  
ICBO  
Collector-Emitter Breakdown Voltage  
30  
V
I = 100 A, I = 0  
µ
C
B
Collector-Cutoff Current  
Emitter-Cutoff Current  
VCB = 30 V, IE = 0  
VEB = 10 V, IC = 0  
100  
100  
nA  
nA  
IEBO  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 10 mA, VCE = 5.0 V  
IC = 100 mA, VCE = 5.0 V  
5,000  
10,000  
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA  
1.5  
2.0  
V
V
VCE(sat)  
VBE(on)  
Base-Emitter On Voltage  
IC = 100 mA, VCE = 5.0 V  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
IC = 10 mA, VCE = 5.0 V,  
f = 100 MHz  
125  
MHz  
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  
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