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Product specification
PZTA92
SOT-223
Unit: mm
■Features
+0.2
+0.2
3.50-0.2
6.50-0.2
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to PZTA42(NPN)
+0.2
0.90-0.2
+0.1
3.00-0.1
+0.3
7.00-0.3
4
1 Base
2 Collector
1
2
3
+0.1
3 Emitter
0.70-0.1
2.9
4.6
4 Collector
■Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-300
-300
-5.0
-300
1
Unit
V
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
mA
W
℃
℃
PC
Tj
150
Storage Temperature
Tstg
-55 to 150
■Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
-300
-300
-5.0
Typ Max
Unit
V
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IcBO
Ic= 100 μA，IE=0
V
Ic= 1 mA，IB=0
V
IE= 100 μA，IC=0
VCB= -200 V , IE=0
VCE= -3.0V , IC=0
-0.25
-0.1
μA
μA
Collector cutoff current
IEBO
VCE= -10V, IC= -1.0mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
25
40
25
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=-20 mA, IB= -2.0mA
VBE(sat) IC=-20 mA, IB= -2.0mA
-0.5
-0.9
V
V
fT
VCE= -20V, IC= -10mA,f=100MHz
VCB=-20V,f=1.0MHz,IE=0
50
MHz
pF
Output Capacitance
Cob
6.0
■ Marking
Marking
A92
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