RoHS
PZT4401
SOT-223
PZT4401 TRANSISTOR (NPN)
FEATURES
Power dissipation
1. BASE
2. COLLECTOR
3. EMITTER
PCM:
1
W (Tamb=25℃)
Collector current
ICM: 0.6
A
Collector-base voltage
V(BR)CBO: 60
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=100µA,IE=0
V(BR)CEO Ic=1mA,IB=0
V(BR)EBO IE=100µA,IC=0
60
40
6
V
V
V
ICBO
IEBO
VCB=60V,IE=0
50
50
nA
nA
Emitter cut-off current
VEB=6V,IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
20
40
DC current gain
VCE=1V,IC=10mA
80
VCE=1V,IC=150mA
VCE=2V,IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=20mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
100
40
300
0.4
0.75
0.95
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Collector capacitance
Emitter capacitance
Delay time
200
MHz
pF
pF
nS
CC
8
CE
30
15
td
WEJ ELECTRONIC CO.,LTD
Rise time
Storage time
Fall time
tr
tS
tf
20
200
60
nS
nS
nS
V
CC=29.5V, IC=150mA
VBB=3.5V,IB1=- IB2=15mA
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WEJ ELECTRONIC CO.
