RoHS
PZT3904
SOT-223
PZT3904 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1
W (Tamb=25℃)
1. BASE
Collector current
2. COLLECTOR
3. EMITTER
ICM: 0.2
A
Collector-base voltage
V(BR)CBO: 60
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=10µA,IE=0
V(BR)CEO Ic=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
60
40
6
V
V
V
ICBO
IEBO
VCB=60V,IE=0
0.1
0.1
µA
µA
Emitter cut-off current
VEB=5V,IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE=10V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
40
70
DC current gain
100
60
300
30
VCE(sat) IC=10mA,IB=1mA
VCE(sat) IC=50mA,IB=5mA
VBE(sat) IC=10mA,IB=1mA
VBE(sat) IC=50mA,IB=5mA
0.2
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.65
300
0.85
0.95
V
V
Transition frequency
fT
VCE=20V,IC=10mA,f=100MHz
MHz
pF
Collector output capacitance
Cob
VCB=5V,IE=0,f=1MHz
4
5
VCE=5V,Ic=0.1mA,
Noise figure
NF
dB
f=10HZ to 15.7KHz,Rg=1KΩ
Delay time
Rise time
td
tr
35
35
nS
nS
nS
V
CC=3V,
IC=10mA,VBE(off)=0.5V,IB1=1mA
=3V, I =10mA
Storage time
tS
200
V
WEJ ELECTRONIC CO.,LTD
CC
C
Fall time
tf
50
nS
IB1= IB2= 1mA
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E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
