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IXYN82N120C3H1

型号：

IXYN82N120C3H1

描述：

高速IGBT为20-50 kHz开关[ High-Speed IGBT for 20-50 kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

192 K

下载PDF手册
1200V XPTTM IGBT  
GenX3TM w/ Diode  
VCES = 1200V  
IC110 = 46A  
VCE(sat) ≤ 3.2V  
tfi(typ) = 93ns  
IXYN82N120C3H1  
High-Speed IGBT  
for 20-50 kHz Switching  
SOT-227B, miniBLOC  
E153432  
E c  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C, RGE = 1MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E c  
C
IC25  
IC110  
IF110  
TC = 25°C (Chip Capability)  
TC = 110°C  
TC = 110°C  
105  
46  
42  
A
A
A
G = Gate, C = Collector, E = Emitter  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
320  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
800  
mJ  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
ICM = 164  
A
Features  
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
z
Optimized for Low Switching Losses  
Square RBSOA  
Isolation Voltage 2500V~  
Anti-Parallel Ultra Fast Diode  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
PC  
TC = 25°C  
500  
W
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
-55 ... +150  
z
VISOL  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z
z
International Standard Package  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
5.0  
z
z
50 μA  
3 mA  
z
TJ = 125°C  
TJ = 125°C  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = 82A, VGE = 15V, Note 1  
2.75  
3.50  
3.20  
V
V
z
Lamp Ballasts  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100352D(03/13)  
IXYN82N120C3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXYN)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
50  
S
Cies  
Coes  
Cres  
4060  
285  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
110  
Qg(on)  
Qge  
Qgc  
215  
26  
nC  
nC  
nC  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
84  
td(on)  
tri  
Eon  
td(off)  
tfi  
29  
78  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
4.95  
192  
93  
280  
VCE = 0.5 • VCES, RG = 2Ω  
Note 2  
Eof  
2.78  
5.00 mJ  
f
td(on)  
tri  
29  
90  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 80A, VGE = 15V  
Eon  
td(off)  
tfi  
7.45  
200  
95  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2Ω  
ns  
Note 2  
Eoff  
3.70  
mJ  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.05  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 125°C  
TJ = 125°C  
1.9  
41  
IRM  
A
IF = 60A, VGE = 0V,  
-diF/dt = 700A/μs, VR = 600V  
trr  
420  
ns  
0.42 °C/W  
RthJC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYN82N120C3H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
160  
140  
120  
100  
80  
VGE = 15V  
13V  
13V  
11V  
10V  
9V  
10V  
12V  
9V  
8V  
7V  
6V  
8V  
60  
7V  
40  
6V  
5V  
20  
5V  
0
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
9V  
I C = 164A  
I C = 82A  
I C = 41A  
8V  
7V  
60  
40  
6V  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
TJ = 25ºC  
I C = 164A  
60  
TJ = 125ºC  
25ºC  
82A  
40  
- 40ºC  
20  
41A  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYN82N120C3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 82A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
C
oes  
60  
res  
TJ = 150ºC  
RG = 2  
40  
Ω
20  
dv / dt < 10V / ns  
= 1 MHz  
5
f
10  
0
0
10  
15  
20  
25  
30  
35  
40  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYN82N120C3H1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
10  
9
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 2  
off  
Ω ,  
VCE = 600V  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
I C = 80A  
TJ = 125ºC  
6
TJ = 25ºC  
4
I C = 40A  
2
0
40  
50  
60  
70  
IC - Amperes  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
200  
180  
160  
140  
120  
100  
80  
780  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
VGE = 15V  
t f i  
t
d(off) - - - -  
off  
RG = 2  
700  
620  
540  
460  
380  
300  
220  
140  
TJ = 125ºC, VGE = 15V  
Ω ,  
VCE = 600V  
VCE = 600V  
I C = 80A  
I C = 40A  
I C = 40A  
I C = 80A  
60  
40  
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
2
4
6
8
10  
12  
14  
16  
18  
RG - Ohms  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
240  
200  
160  
120  
80  
280  
260  
240  
220  
200  
180  
160  
280  
240  
200  
160  
120  
80  
240  
230  
220  
210  
200  
190  
180  
170  
t f i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
RG = 2  
, VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
I C = 40A  
I C = 80A  
TJ = 125ºC  
TJ = 25ºC  
40  
40  
0
0
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
40  
50  
60  
70  
IC - Amperes  
80  
90  
100  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYN82N120C3H1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
140  
120  
100  
80  
60  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
tr i  
td(on)  
- - - -  
t r i  
td(on) - - - -  
RG = 2  
,
VGE = 15V  
Ω
50  
40  
30  
20  
10  
0
TJ = 125ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 80A  
TJ = 25ºC  
60  
60  
40  
I C = 40A  
40  
20  
20  
0
40  
50  
60  
70  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
tr i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
VCE = 600V  
I C = 80A  
60  
40  
I C = 40A  
20  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_82N120C3(8M)12-13-12-A  
IXYN82N120C3H1  
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt  
Fig. 21. Typ. Forward Characteristics  
12  
11  
10  
9
120  
100  
80  
60  
40  
20  
0
TVJ = 125ºC  
VR = 600V  
TVJ = 25ºC  
120A  
60A  
TVJ = 125ºC  
8
7
6
30A  
5
4
0
0.5  
1
1.5  
2
2.5  
3
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1300  
10  
VF - Volts  
-diF/dt - [A/µs]  
Fig. 24. Typ. Recovery Time trr vs. -diF/dt  
Fig. 23. Typ. PeakReverse Current IRM vs. -diF/dt  
90  
80  
70  
60  
50  
40  
30  
20  
700  
600  
500  
400  
300  
200  
TVJ = 125ºC  
TVJ = 125ºC  
VR = 600V  
120A  
VR = 600V  
60A  
30A  
120A  
60A  
30A  
600  
700  
800  
900  
1000  
1100  
1200  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
-diF/dt - [A/µs]  
-diF/dt - [A/µs]  
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt  
Fig. 26. Maximum Transient Thermal Impedance  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
1
TVJ = 125ºC  
VR = 600V  
120A  
60A  
30A  
0.1  
0.01  
0.0001  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
0.001  
0.01  
0.1  
1
-diF/dt - [A/µs]  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
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