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PZT3904

型号:

PZT3904

描述:

集电极耗散功率: PC = 1W[ Collector Power Dissipation: PC=1W ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

1 页

PDF大小:

77 K

Product specification  
PZT3904  
SOT-223  
Unit: mm  
+0.2  
+0.2  
Features  
3.50-0.2  
6.50-0.2  
Collector Power Dissipation: PC=1W  
Collector Current: IC= 200mA  
Complementary PNP Type Available(PZT3906)  
+0.2  
0.90-0.2  
+0.1  
3.00-0.1  
+0.3  
7.00-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
3 Emitter  
0.70-0.1  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
40  
V
6
200  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
mA  
W
PC  
1
TJ  
150  
Storage Temperature  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
60  
40  
6
Typ Max  
Unit  
V
Collecto- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO  
VEBO  
IcBO  
Ic= 10 μAIE=0  
V
Ic= 1 mAIB=0  
V
IE= 10μAIC=0  
VCB= 60 V , IE=0  
VCE= 30 V , VBE(off)=3V  
VEB= 5V , IC=0  
0.1  
50  
μA  
nA  
μA  
Collector cut-off current  
IcEO  
Emitter cut-off current  
IEBO  
0.1  
300  
VCE= 1V, IC= 10mA  
VCE= 1V, IC= 50mA  
100  
60  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Delay time  
VCE(sat) IC=50 mA, IB= 5mA  
VBE(sat) IC= 50 mA, IB= 5mA  
0.4  
0.95  
35  
V
V
td  
tr  
VCC=3.0V,VBE=-0.5V  
IC=10mA,IB1=-IB2=1.0mA  
VCC=3.0V,IC=10mA  
IB1=-IB2=1.0mA  
ns  
Rise time  
35  
Storage time  
ts  
tf  
200  
50  
ns  
Fall time  
Transition frequency  
fT  
VCE= 20V, IC= 10mA,f=100MHz  
300  
MHz  
Marking  
Marking  
3904  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  
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