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PZT2222A

型号:

PZT2222A

描述:

产品speci fi cation[ Product specification ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

147 K

Product specification  
PZT2222A  
SOT-223  
Unit: mm  
Features  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
High current (max. 600 mA)  
Low voltage (max.40 V).  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
75  
V
V
Collector-emitter voltage  
40  
Emitter-base voltage  
6
600  
V
Collector current  
mA  
mA  
mA  
W
Peak collector current  
ICM  
800  
Peak base current  
IBM  
200  
Ptot  
1
Total power dissipation Ta 25  
Storage temperature  
Tstg  
-65 to +150  
150  
Junction temperature  
Tj  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Thermal resistance from junction to soldering point  
Tamb  
Rth(j-a)  
Rth(j-s)  
-65 to +150  
109  
K/W  
K/W  
28  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
PZT2222A  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = 60 V  
Min  
Typ  
Max  
10  
Unit  
nA  
A
Collector cutoff current  
Emitter cutoff current  
10  
IE = 0; VCB = 60 V; Tj = 125  
IC = 0; VEB = 5 V  
IEBO  
10  
nA  
IC = 0.1 mA; VCE = 10 V  
IC = 1 mA; VCE = 10 V  
35  
50  
IC = 10 mA; VCE = 10 V  
IC = 10 mA; VCE = 10 V;Ta = -55  
IC = 150 mA; VCE = 1 V *  
IC = 150 mA; VCE = 10 V *  
IC = 500 mA; VCE = 10 V *  
75  
35  
DC current gain  
hFE  
50  
100  
40  
300  
300  
1
mV  
V
IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
IE = iE = 0; VCB = 10 V; f = 1 MHz  
collector-emitter saturation voltage  
base-emitter saturation voltage  
VCEsat  
VBEsat  
0.6  
1.2  
2
V
V
Collector capacitance  
Emitter capacitance  
Cc  
Ce  
8
pF  
pF  
25  
IC = iC = 0; VEB = 500 mV; f = 1 MHz  
ICon = 150 mA; IBon = 15 mA;  
IBoff = -15 mA  
Turn-on time  
Delay time  
Rise time  
ton  
td  
35  
10  
ns  
ns  
ns  
ns  
ns  
tr  
25  
Turn-off time  
Storage time  
toff  
ts  
250  
200  
60  
Fall time  
tf  
ns  
Transition frequency  
fT  
300  
MHz  
IC = 20 mA; VCE = 20 V; f = 100 MHz  
* Pulse test: tp  
300 ìs; ä  
0.02.  
Marking  
Marking  
2222A  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  
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