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PZTA92T1G

型号:

PZTA92T1G

描述:

高压晶体管PNP硅[ High Voltage Transistor PNP Silicon ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

88 K

PZTA92T1G  
High Voltage Transistor  
PNP Silicon  
Features  
Complement to PZTA42T1G  
http://onsemi.com  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
SOT−223 PACKAGE  
PNP SILICON  
HIGH VOLTAGE TRANSISTOR  
SURFACE MOUNT  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
−300  
−300  
−5.0  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
W
V
CEO  
V
CBO  
V
EBO  
COLLECTOR 2,4  
BASE  
1
I
C
−500  
Total Power Dissipation  
P
D
up to @ T = 25°C (Note 1)  
1.5  
65 to +150  
150  
A
EMITTER 3  
4
Storage Temperature Range  
Junction Temperature  
T
°C  
°C  
stg  
T
J
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
2
3
1. Device mounted on a FR-4 glass epoxy printed circuit board  
SOT−223  
CASE 318E  
STYLE 1  
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Thermal Resistance,  
Junction−to−Ambient (Note 2)  
R
°C/W  
q
JA  
83.3  
2. Device mounted on a FR−4 glass epoxy printed circuit board  
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.  
AYW  
P2DG  
G
1
P2D  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
W
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
PZTA92T1G  
SOT−223  
(Pb−Free)  
1,000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 9  
PZTA92T1/D  
 
PZTA92T1G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristics  
OFF CHARACTERISTICS  
Collector−Emitter Breakdown Voltage (Note 3)  
Symbol  
Min  
Max  
Unit  
V
V
V
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = −1.0 mAdc, I = 0)  
−300  
−300  
−5.0  
C
B
Collector−Base Breakdown Voltage  
(I = −100 mAdc, I = 0)  
C
E
Emitter−Base Breakdown Voltage  
(I = −100 mAdc, I = 0)  
Vdc  
E
C
Collector-Base Cutoff Current  
(V = −200 Vdc, I = 0)  
I
mAdc  
mAdc  
CBO  
−0.25  
−0.1  
CB  
E
Emitter−Base Cutoff Current  
(V = −3.0 Vdc, I = 0)  
I
EBO  
BE  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = −1.0 mAdc, V = −10 Vdc)  
25  
40  
40  
C
CE  
(I = −10 mAdc, V = −10 Vdc)  
C
CE  
(I = −30 mAdc, V = −10 Vdc)  
C
CE  
Saturation Voltages  
Vdc  
(I = −20 mAdc, I = −2.0 mAdc)  
V
0.5  
0.9  
C
B
CE(sat)  
V
BE(sat)  
(I = −20 mAdc, I = −2.0 mAdc)  
C
B
DYNAMIC CHARACTERISTICS  
Collector−Base Capacitance @ f = 1.0 MHz  
C
pF  
cb  
(V = −20 Vdc, I = 0)  
6.0  
CB  
E
Current−Gain − Bandwidth Product  
(I = −10 mAdc, V = 20 Vdc, f = 100 MHz)  
f
T
MHz  
50  
C
CE  
3. Pulse Test Conditions, t = 300 ms, d 0.02.  
p
300  
V
CE  
= 10 Vdc  
T = +125°C  
J
250  
200  
150  
25°C  
-55°C  
100  
50  
0
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
http://onsemi.com  
2
 
PZTA92T1G  
100  
10  
150  
130  
C
@ 1MHz  
ib  
110  
90  
C
@ 1MHz  
cb  
70  
50  
30  
10  
1.0  
0.1  
T = 25°C  
J
V
= 20 Vdc  
F = 20 MHz  
CE  
0.1  
1.0  
10  
V , REVERSE VOLTAGE (V)  
100  
1000  
1
11  
13  
15  
17  
19  
21  
3
5
7
9
R
I , COLLECTOR CURRENT (mA)  
C
Figure 2. Capacitance  
Figure 3. Current−Gain − Bandwidth  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
V
@ 25°C, I /I = 10  
CE(sat)  
C B  
@ 125°C, I /I = 10  
CE(sat)  
CE(sat)  
BE(sat)  
C B  
V
V
@ -55°C, I /I = 10  
C B  
@ 25°C, I /I = 10  
C B  
V
V
V
@ 125°C, I /I = 10  
BE(sat)  
BE(sat)  
BE(on)  
C B  
@ -55°C, I /I = 10  
C B  
@ 25°C, V = 10 V  
CE  
V
V
@ 125°C, V = 10 V  
BE(on)  
CE  
@ -55°C, V = 10 V  
CE  
BE(on)  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 4. ”ON” Voltages  
1
10 ms  
0.1  
1.0 s  
0.01  
0.001  
1
10  
100  
1000  
V
CE  
, COLLECTOR−EMITTER VOLTAGE (V)  
Figure 5. Safe Operating Area  
http://onsemi.com  
3
PZTA92T1G  
PACKAGE DIMENSIONS  
SOT−223 (TO−261)  
CASE 318E−04  
ISSUE N  
D
b1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCH.  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
−−−  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0.20  
1.50  
6.70  
0°  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
−−−  
1.75  
7.00  
MAX  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.008  
0.060  
0.264  
0°  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
−−−  
H
E
E
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
−−−  
2.00  
7.30  
10°  
1
3
b
e1  
e
0.069  
0.276  
0.078  
0.287  
10°  
C
q
H
E
q
A
0.08 (0003)  
STYLE 1:  
A1  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
L
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
ǒ
Ǔ
1.5  
0.059  
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
PZTA92T1/D  
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