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PZTA63_10

型号:

PZTA63_10

描述:

PNP达林顿晶体管[ PNP Darlington Transistor ]

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

4 页

PDF大小:

185 K

August 2010  
MPSA63 / MMBTA63 / PZTA63  
PNP Darlington Transistor  
Features  
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.  
• Sourced from Process 61.  
MMBTA63  
PZTA63  
MPSA63  
C
C
E
E
C
B
TO-92  
SOT-23  
Mark:2U  
SOT-223  
B
EBC  
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted  
Symbol  
VCES  
VCBO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage  
Value  
Units  
-30  
-30  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
-10  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
-1.2  
A
TJ, Tstg  
- 55 to +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics Ta = 25°C unless otherwise noted  
Max.  
Symbol  
Parameter  
Units  
MPSA63  
*MMBTA63  
**PZTA63  
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
PD  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
357  
125  
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.  
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.  
© 2010 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
MPSA63 / MMBTA63 / PZTA63 Rev. A1  
1
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
BV(BR)CES  
ICBO  
Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0  
-30  
V
Collector-Cutoff Current  
Emitter-Cutoff Current  
VCB = -30V, IE = 0  
VEB = -10V, IC = 0  
-100  
-100  
nA  
nA  
IEBO  
On Characteristics *  
hFE  
DC Current Gain  
IC = -10mA, VCE = -5.0V  
IC = -100mA, VCE = -5.0V  
5,000  
10,000  
VCE(sat)  
VBE(on)  
Small Signal Characteristics  
Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA  
-1.5  
-2.0  
V
V
Base-Emitter On Voltage  
IC = -100mA, VCE = -5.0V  
fT  
Current Gain - Bandwidth Product  
IC = -10mA, VCE = -5.0V,  
f = 100MHz  
125  
MHz  
* Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%  
Typical Performance Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
50  
1.6  
1.2  
0.8  
0.4  
0
β
= 1000  
VCE = 5V  
40  
- 40 °C  
125 °C  
30  
20  
10  
0
25 °C  
25 °C  
125 °C  
- 40 °C  
0.01  
0.1  
IC - COLLECTOR CURRENT (A)  
1
0.001  
0.01  
0.1  
1
F
E
IC - COLLECTOR CURRENT (A)  
Figure 1. Typical Pulsed Current Gain  
vs Collector Current  
Figure 2. Collector-Emitter Saturation Voltage  
vs Collector Current  
© 2010 Fairchild Semiconductor Corporation  
MPSA63 / MMBTA63 / PZTA63 Rev. A1  
www.fairchildsemi.com  
2
Typical Performance Characteristics (continued)  
Base Emitter ON Voltage vs  
Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
2
1.6  
1.2  
0.8  
0.4  
0
2
β
= 1000  
- 40 °C  
- 40 °C  
1.6  
1.2  
0.8  
0.4  
0
25 °C  
25 °C  
125 °C  
125 °C  
V
= 5V  
CE  
T
A
S
BE  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I C- COLLECTOR CURRENT (A)  
I C- COLLECTOR CURRENT (A)  
Figure 3. Base-Emitter Saturation Voltage  
vs Collector Current  
Figure 4. Base-Emitter On Voltage  
vs Collector Current  
Collector-Cutoff Current  
vs Ambient Temperature  
Input and Output Capacitance  
vs Reverse Bias Voltage  
100  
10  
16  
f = 1.0 MHz  
VCB= 15V  
12  
8
1
C
ib  
0.1  
4
C
ob  
C
B
O
0.01  
0
25  
50  
75  
100  
125  
0.1  
1
10  
100  
TA- AMBIENT TEMPERATURE ( C)  
REVERSE VOLTAGE (V)  
°
Figure 6. Input and Output Capacitance  
vs Reverse Bias Voltage  
Figure 5. Collector Cutoff Current  
vs Ambient Temperature  
Power Dissipation vs  
Ambient Temperature  
1
0.75  
0.5  
SOT-223  
TO-92  
SOT-23  
0.25  
0
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
Figure 7. Power Dissipation  
vs Ambient Temperature  
© 2010 Fairchild Semiconductor Corporation  
MPSA63 / MMBTA63 / PZTA63 Rev. A1  
www.fairchildsemi.com  
3
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
®
*
AccuPower¥  
Auto-SPM¥  
Build it Now¥  
CorePLUS¥  
CorePOWER¥  
CROSSVOLT¥  
CTL¥  
F-PFS¥  
Power-SPM¥  
PowerTrench®  
PowerXS™  
FRFET®  
The Power Franchise®  
Global Power ResourceSM  
Green FPS¥  
Green FPS¥ e-Series¥  
Gmax¥  
GTO¥  
IntelliMAX¥  
ISOPLANAR¥  
MegaBuck¥  
MICROCOUPLER¥  
MicroFET¥  
Programmable Active Droop¥  
QFET®  
QS¥  
TinyBoost¥  
TinyBuck¥  
Quiet Series¥  
RapidConfigure¥  
¥
TinyCalc¥  
Current Transfer Logic¥  
DEUXPEED®  
Dual Cool™  
TinyLogic®  
TINYOPTO¥  
TinyPower¥  
TinyPWM¥  
TinyWire¥  
TriFault Detect¥  
TRUECURRENT¥*  
PSerDes¥  
Saving our world, 1mW/W/kW at a time™  
SignalWise¥  
SmartMax¥  
EcoSPARK®  
EfficientMax¥  
ESBC¥  
MicroPak¥  
SMART START¥  
®
SPM®  
MicroPak2¥  
MillerDrive¥  
MotionMax¥  
Motion-SPM¥  
OptoHiT™  
Fairchild®  
STEALTH¥  
SuperFET¥  
SuperSOT¥-3  
SuperSOT¥-6  
SuperSOT¥-8  
SupreMOS®  
Fairchild Semiconductor®  
FACT Quiet Series¥  
FACT®  
OPTOLOGIC®  
UHC®  
FAST®  
OPTOPLANAR®  
Ultra FRFET¥  
UniFET¥  
VCX¥  
FastvCore¥  
®
SyncFET¥  
Sync-Lock™  
FETBench¥  
FlashWriter®  
*
PDP SPM™  
VisualMax¥  
XS™  
FPS¥  
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR  
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE  
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,  
under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.  
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,  
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of  
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are  
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have  
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I49  
© Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
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