PZT669A
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT669A is designed for low frequency
power amplifier complementary pair with PZT649A.
REF.
REF.
Min.
6.70
2.90
0.02
0̓
Max.
7.30
3.10
0.10
10̓
Min.
13̓TYP.
2.30 REF.
Max.
A
C
D
E
I
B
J
6 6 9 A
Date Code
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
6.30
3.30
3.30
1.40
B
C
E
0.60
0.25
0.80
0.35
H
Absolute Maximum Ratings at TA=25oC
Parameter
Symbol
Ratings
Unit
V
Collector to Base Voltage
VCBO
180
160
5..0
VCEO
VEBO
IC
Collector to Emitter Voltage
Emitter to Base Voltage
V
V
Collect Current (DC)
Collect Current (Pulse)
Total Power Dissipation
1..5
A
A
3.0
IC
PD
1.5
W
oC
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Tamb=25oC)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
DC Current Gain
Symbol
Min. Typ. Max. Unit
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB =0
IE=1mA, IC=0
VCB=160V, IE=0
VCB=10V,f=1MHz
IC=600mA, I B=50mA
VCE=5V, I C=150mA
VCE=5V, I C=150mA
-
-
-
-
-
180
160
5
-
-
-
V
V
BVCBO
BVCEO
BVEBO
ICBO
-
-
14
-
V
10
-
1
uA
pF
V
Cob
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
V
-
-
-
-
1.5
200
-
-
60
30
-
VCE=5V, I C=500mA
VCE=5V, I C=10mA, f=100MHz
MHz
140
Transition Frequency
*Pulse Test: Pulse Width≦380us, Duty Cycle 2%
≦
CLASSIFICATION OF hFE1
Rank
hFE1
B
C
60~120
100~200
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
