PZT359
PNP Silicon Planar
High Current Transistor
Elektronische Bauelemente
RoHS Compliant Product
Features
5 Amps continuous current, up to 10 Amp peak current.
Excellent gain characteristic specified up to 10Amps.
Very low saturation voltage
SOT-223
ꢂ ꢁ ꢃ ꢃ f ꢃ ꢁ ꢄ ꢃ
5ꢀꢁꢃꢅ
5ꢀꢁꢃꢅ
ꢇ ꢁ ꢂ ꢃ
ꢀꢁꢄꢅ
ꢃꢄefꢃe
Mechanical Data
C
ꢃꢄefꢃe
ꢃ ꢁ ꢈ ꢄ
ꢀ ꢁ ꢂ ꢃ f ꢃ ꢁ ꢄ ꢃ
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 359
1.6fꢃꢁ2ꢃ
E
ꢆefꢂe
1
2
3
C
B
1. BASE
xxxx
(xxxx = date code)
2. COLLECTOR
3. EMITTER
Maximum Ratings and Thermal Characteristics
O
(TA = 25 C, unless otherwise noted)
Parameter
Symbol
Value
+150
-55 to +150
-140
Unit
OC
Junction Temperature
Storage Temperature
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
T
j
O C
V
Tstg
VCBO
VCEO
VEBO
IC
-100
V
V
-6
-5
A
C
I
A
-10
3
PD
W
w
Total Po er Dissipation
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.
Electrical Characteristics (TJ = 25OC, unless otherwise noted)
Typ.
Parameter
Symbol
Min
Max
Uni Test Conditions
Collector-Base Breakdown Voltage
IC=-100μA, IE=0
BVCBO
-140
-
-
V
Collector-Emitter Breakdown Voltage
IC=-1μA, RB<=1KΩ
BVCER
-140
-
-
V
(w/ Real Device Limit)
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
*BVCEO
BVEBO
ICBO
-100
-6
-
-
-
-
-
-
V
V
IC=-10mA, IB=0
IE=-100μA, IC=0
-50
nA VCB=-100V, IE=0
VCB=-100V, R<=1KΩ
nA
Collector-Base Cutoff Current
ICER
-
-
-50
(w/ Real Device Limit)
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector Saturation Voltage 3
Collector Saturation Voltage 4
Base Saturation Voltage
Base-Emitter Voltage
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
-
-
-
-
-
-
-
-
-10
-50
nA VEB=-6V, IC=0
mV IC=-100mA, IB=-10mA
-20
-90
-160
-300
-1.01 -1.17
-0.925 -1.16
200
200
90
-115 mV IC=-1A, IB=-100mA
-220 mV IC=-2A, IB=-200mA
-420 mV IC=-4A, IB=-400mA
V
V
IC=-4A, IB=-400mA
VCE=-1V, IC=-4A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
VCE=-1V, IC=-4A
VCE=-1V, IC=-10A
DC Current Gain 1
100
100
50
30
-
-
DC Current Gain 2
*hFE2
*hFE3
*hFE4
*hFE5
300
DC Current Gain 3
-
-
-
-
DC Current Gain 4
50
15
125
DC Current Gain 5
Gain-Bandwidth Product
fT
-
MHz VCE=-10V, IC=-100mA, f=50MHz
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
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