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DZT651-13

型号：

DZT651-13

描述：

低VCE （ SAT） NPN表面贴装晶体管[ LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

148 K

下载PDF手册
DZT651  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DZT751)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
2,4  
3 E  
2 C  
1 B  
C 4  
1
BASE  
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
3
EMITTER  
•
•
•
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.115 grams  
TOP VIEW  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
80  
60  
5
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Continuous Collector Current  
Peak Pulse Collector Current  
3
A
6
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
1 (Note 3)  
2 (Note 4)  
W
Power Dissipation @TA = 25°C  
PD  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Device mounted on Polyimide PCB with 1.8cm2 copper area.  
DS30809 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DZT651  
© Diodes Incorporated  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Off Characteristics (Note 5)  
Symbol  
Min  
Typ  
Max  
Unit Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
80  
60  
5
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
I
C = 100μA, IE = 0  
IC = 10mA, IB = 0  
E = 100μA, IC = 0  
I
0.1  
10  
μA  
μA  
VCB = 60V, IE = 0  
VCB = 60V, IE = 0, TA = 100°C  
Collector Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
Emitter Cutoff Current  
0.1  
μA  
VEB = 4V, IC = 0  
On Characteristics (Note 5)  
⎯
⎯
0.08  
0.23  
0.3  
0.6  
V
V
IC = 1A, IB = 100mA  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
I
C = 3A, IB = 300mA  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.85  
0.8  
1.25  
1
V
V
VBE(SAT)  
VBE(ON)  
⎯
⎯
IC = 1A, IB = 100mA  
VCE = 2V, IC = 1A  
VCE = 2V, IC = 50mA  
VCE = 2V, IC = 500mA  
⎯
300  
⎯
70  
100  
80  
200  
200  
185  
120  
DC Current Gain  
hFE  
⎯
V
CE = 2V, IC = 1A  
40  
⎯
VCE = 2V, IC = 2A  
AC Characteristics  
Transition Frequency  
Output Capacitance  
140  
200  
MHz  
pF  
fT  
⎯
VCE = 5V, IC = 100mA, f = 100MHz  
30  
Cobo  
⎯
⎯
VCB = 10V, f = 1MHz  
ton  
toff  
VCC = 10V, IC = 500mA  
IB1 = IB2 = 50mA  
⎯
⎯
35  
230  
⎯
⎯
ns  
ns  
Switching Times  
Notes:  
5. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.  
2.0  
1.2  
1.0  
0.8  
1.8  
I
I
= 10mA  
B
B
1.6  
1.4  
1.2  
= 8mA  
= 6mA  
= 4mA  
I
I
B
B
0.6  
0.4  
1.0  
0.8  
0.6  
0.4  
I
= 2mA  
0.2  
0
B
0.2  
0.0  
0
1
2
3
4
5
25  
50  
75  
100 125  
150 175  
0
VCE, COLLECTOR EMITTER VOLTAGE (V)  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)  
DS30809 Rev. 3 - 2  
2 of 4  
www.diodes.com  
DZT651  
© Diodes Incorporated  
0.35  
0.3  
350  
300  
V
= 2V  
CE  
T
T
= 150°C  
= 85°C  
I
/I = 10  
A
C B  
0.25  
0.2  
250  
200  
150  
100  
A
T
= 25°C  
A
0.15  
0.1  
0.05  
0
T
= 150°C  
A
T
= -55°C  
A
T
= 85°C  
A
T
= 25°C  
A
50  
0
T
= -55°C  
A
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 3 Typical DC Current Gain  
vs. Collector Current  
1.2  
1.0  
1.2  
V
= 2V  
CE  
I
/I = 10  
B
C
1.0  
0.8  
0.6  
0.8  
0.6  
0.4  
T
= -55°C  
= 25°C  
A
T
= -55°C  
A
T
A
T
= 25°C  
= 85°C  
A
0.4  
T
= 85°C  
A
T
A
T
= 150°C  
0.2  
0
0.2  
T
= 150°C  
A
A
0.0  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
250  
200  
60  
50  
f = 1MHz  
40  
30  
20  
150  
100  
50  
0
V
= 5V  
CE  
f = 100MHz  
10  
0
0
5
10  
VR, REVERSE VOLTAGE (V)  
Fig. 7 Typical Output Capacitance Characteristics  
15  
20  
25  
30  
35 40  
0
20  
IC, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current  
40  
60  
80  
100  
DS30809 Rev. 3 - 2  
3 of 4  
www.diodes.com  
DZT651  
© Diodes Incorporated  
Ordering Information (Note 6)  
Packaging  
Shipping  
Device  
SOT-223  
2500/Tape & Reel  
DZT651-13  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf.  
Marking Information  
(Top View)  
KN2 = Product Type Marking Code  
YWW  
KN2  
YWW = Date Code Marking  
Y = Last digit of year ex: 7 = 2007  
WW = Week code 01 - 52  
Package Outline Dimensions  
SOT-223  
Dim Min Max Typ  
1.55 1.65 1.60  
A1 0.010 0.15 0.05  
A
b1  
b2  
C
D
E
E1  
e
e1  
L
2.90 3.10 3.00  
0.60 0.80 0.70  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
—
—
—
—
4.60  
2.30  
0.85 1.05 0.95  
0.84 0.94 0.89  
Q
All Dimensions in mm  
Suggested Pad Layout  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30809 Rev. 3 - 2  
4 of 4  
www.diodes.com  
DZT651  
© Diodes Incorporated  
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