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PZT651

型号:

PZT651

描述:

NPN硅平面外延型晶体管[ NPN Silicon Planar Epitaxial Transistor ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

107 K

PZT651  
NPN Silicon Planar  
Epitaxial Transistor  
This NPN Silicon Epitaxial transistor is designed for use in  
industrial and consumer applications. The device is housed in the  
SOT223 package which is designed for medium power surface  
mount applications.  
http://onsemi.com  
SOT223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
SOT223 PACKAGE HIGH CURRENT  
NPN SILICON TRANSISTOR  
SURFACE MOUNT  
Features  
High Current  
4
1
2
3
The SOT223 Package can be Soldered Using Wave or Reflow  
Available in 12 mm Tape and Reel  
SOT223  
CASE 318E04  
STYLE 1  
Use PZT651T1 to Order the 7 inch/1000 Unit Reel  
Use PZT651T3 to Order the 13 inch/4000 Unit Reel  
PNP Complement is PZT751T1  
COLLECTOR 2, 4  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
BASE  
1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING DIAGRAM  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
W
V
CEO  
V
CBO  
V
EBO  
AYW  
651 G  
G
80  
5.0  
2.0  
1
I
C
Total Power Dissipation  
P
D
A
Y
= Assembly Location  
= Year  
@ T = 25°C (Note 1)  
Derate above 25°C  
0.8  
6.4  
A
mW/°C  
°C  
WW = Work Week  
G
= PbFree Package  
Storage Temperature Range  
Junction Temperature  
T
65 to 150  
stg  
(Note: Microdot may be in either location)  
T
150  
°C  
J
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance from  
JunctiontoAmbient in Free Air  
R
156  
°C/W  
q
JA  
PZT651T1G  
SOT223 1,000 / Tape & Reel  
(PbFree)  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
260  
10  
°C  
SPZT651T1G  
SOT223 1,000 / Tape & Reel  
(PbFree)  
L
Sec  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum  
recommended footprint.  
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 Rev. 8  
PZT651T1/D  
 
PZT651  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 10 mAdc, I = 0)  
60  
80  
5.0  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
C
E
EmitterBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
Vdc  
E
C
BaseEmitter Cutoff Current  
(V = 4.0 Vdc)  
EB  
I
mAdc  
nAdc  
EBO  
0.1  
100  
CollectorBase Cutoff Current  
I
CBO  
(V = 80 Vdc, I = 0)  
CB  
E
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
h
FE  
(I = 50 mAdc, V = 2.0 Vdc)  
75  
75  
75  
40  
C
CE  
(I = 500 mAdc, V = 2.0 Vdc)  
C
CE  
(I = 1.0 Adc, V = 2.0 Vdc)  
C
CE  
(I = 2.0 Adc, V = 2.0 Vdc)  
C
CE  
CollectorEmitter Saturation Voltages  
(I = 2.0 Adc, I = 200 mAdc)  
V
Vdc  
CE(sat)  
0.5  
0.3  
C
B
(I = 1.0 Adc, I = 100 mAdc)  
C
B
BaseEmitter Voltages  
(I = 1.0 Adc, V = 2.0 Vdc)  
V
Vdc  
Vdc  
MHz  
BE(on)  
1.0  
1.2  
C
CE  
BaseEmitter Saturation Voltage  
(I = 1.0 Adc, I = 100 mAdc)  
V
BE(sat)  
C
B
CurrentGain — Bandwidth  
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)  
f
T
75  
C
CE  
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%  
http://onsemi.com  
2
 
PZT651  
NPN  
PNP  
300  
270  
250  
T = 125°C  
J
225  
200  
175  
150  
125  
100  
75  
V
CE  
= -2.0 V  
V
CE  
= 2.0 V  
T = 125°C  
J
240  
210  
25°C  
180  
150  
120  
90  
25°C  
-ꢀ55°C  
-ꢀ55°C  
60  
50  
30  
25  
0
0
10  
20  
50 100 200  
500 1.0 A 2.0 A 4.0 A  
-10 -ꢀ20  
-ꢀ50 -100 -ꢀ200 -ꢀ500 -1.0 A -2.0 A -4.0 A  
I , COLLECTOR CURRENT (mA)  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 1. Typical DC Current Gain  
NPN  
Figure 2. Typical DC Current Gain  
PNP  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
-2.0  
-1.8  
-1.6  
-1.4  
-1.2  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
V
@ I /I = 10  
C B  
BE(sat)  
V
@ I /I = 10  
C B  
BE(sat)  
V
BE(on)  
@ V = 2.0 V  
CE  
V
BE(on)  
@ V = 2.0 V  
CE  
V
@ I /I = 10  
C B  
CE(sat)  
V
@ I /I = 10  
C B  
CE(sat)  
50  
100  
200  
500  
1.0 A  
2.0 A  
4.0 A  
-50  
-100  
-200  
-500 -1.0 A -2.0 A -4.0 A  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 3. On Voltages  
NPN  
Figure 4. On Voltages  
PNP  
1.0  
0.9  
0.8  
0.7  
-1.0  
-0.9  
-0.8  
-0.7  
T = 25°C  
J
T = 25°C  
J
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0
I
C
= 10 mA  
I
C
= 100 mA  
I
C
= 500 mA  
I
C
= 2.0 A  
I
= -500 mA  
I = -2.0 A  
C
C
I
C
= -10 mA  
I
C
= -100 mA  
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20  
50 100 200 500  
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500  
I , BASE CURRENT (mA)  
B
I , BASE CURRENT (mA)  
B
Figure 5. Collector Saturation Region  
Figure 6. Collector Saturation Region  
http://onsemi.com  
3
PZT651  
PACKAGE DIMENSIONS  
SOT223 (TO261)  
CASE 318E04  
ISSUE N  
D
b1  
NOTES:  
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,  
1994.  
ꢁꢂ2. CONTROLLING DIMENSION: INCH.  
MILLIMETERS  
INCHES  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0.20  
1.50  
6.70  
0°  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
−−−  
1.75  
7.00  
MAX  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.008  
0.060  
0.264  
0°  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
−−−  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
−−−  
H
E
E
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
−−−  
2.00  
7.30  
10°  
1
3
b
e1  
e
0.069  
0.276  
0.078  
0.287  
10°  
C
q
H
E
A
q
0.08 (0003)  
STYLE 1:  
A1  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
L
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
PZT651T1/D  
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