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FZ1200R12KL4C

型号：

FZ1200R12KL4C

描述：

IGBT - Wechselrichter / IGBT逆变器[ IGBT-Wechselrichter / IGBT-inverter ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

8 页

PDF大小：

263 K

下载PDF手册
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C  
T† = 25°C  
I† ÒÓÑ  
I†  
1200  
1900  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms, T† = 80°C  
T† = 25°C  
I†ç¢  
PÚÓÚ  
2400  
7,80  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 1200 A, V•Š = 15 V, TÝÎ = 25°C  
I† = 1200 A, V•Š = 15 V, TÝÎ = 125°C  
V†Š ÙÈÚ  
2,10 2,60  
2,40 2,90  
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 48,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•ŠÚÌ  
Q•  
4,5  
5,5  
13,0  
1,3  
6,5  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
90,0  
7,00  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 1200 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 125°C  
tÁ ÓÒ  
tØ  
0,54  
0,57  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 1200 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 125°C  
0,18  
0,18  
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 1200 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 125°C  
tÁ ÓËË  
tË  
1,05  
1,15  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 1200 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 125°C  
0,13  
0,14  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 1200 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, TÝÎ = 125°C  
EÓÒ  
EÓËË  
mJ  
mJ  
165  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 1200 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 125°C  
mJ  
mJ  
195  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
9000  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
16,0 K/kW  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
1
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Diode-Wechselrichter / diode-inverter  
Höchstzulässige Werte / maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
Vçç¢  
IŒ  
1200  
1200  
2400  
300  
V
A
Dauergleichstrom  
DC forward current  
Periodischer Spitzenstrom  
t« = 1 ms  
IŒç¢  
I²t  
A
repetitive peak forward current  
Grenzlastintegral  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
I²t - value  
kA²s  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 1200 A, V•Š = 0 V, TÝÎ = 25°C  
IŒ = 1200 A, V•Š = 0 V, TÝÎ = 125°C  
VŒ  
Iç¢  
QØ  
1,80 2,30  
1,70 2,20  
V
V
Rückstromspitze  
peak reverse recovery current  
IŒ = 1200 A, - diŒ/dt = 6800 A/µs  
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C  
740  
980  
A
A
Sperrverzögerungsladung  
recovered charge  
IŒ = 1200 A, -diŒ/dt = 6800 A/µs  
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C  
105  
215  
µC  
µC  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 1200 A, -diŒ/dt = 6800 A/µs  
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C  
EØþÊ  
45,0  
80,0  
mJ  
mJ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode  
per diode  
RÚÌœ†  
32,0 K/kW  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
2
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Modul / module  
Isolations-Prüfspannung  
RMS, f = 50 Hz, t = 1 min  
insulation test voltage  
Vš»¥¡  
2,5  
kV  
Material für innere Isolation  
material for internal insulation  
AlèOé  
17,0  
Kriechstrecke  
creepage distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
mm  
mm  
Luftstrecke  
clearance distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
10,0  
Vergleichszahl der Kriechwegbildung  
comparative tracking index  
CTI  
> 275  
min. typ. max.  
6,00  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Modul / per module  
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)  
RÚ̆™  
LÙ†Š  
K/kW  
nH  
Modulinduktivität  
stray inductance module  
15  
Modulleitungswiderstand,  
Anschlüsse - Chip  
module lead resistance,  
terminals - chip  
T† = 25°C, pro Schalter / per switch  
R††óôŠŠó  
0,10  
m  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
TÝÎ ÑÈà  
TÝÎ ÓÔ  
TÙÚÃ  
150  
°C  
°C  
°C  
Temperatur im Schaltbetrieb  
temperature under switching conditions  
-40  
-40  
125  
125  
Lagertemperatur  
storage temperature  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
Schraube / screw M6  
M
M
4,25  
-
5,75 Nm  
2,3 Nm  
Anzugsdrehmoment f. elektr. Anschlüsse Schraube / screw M4  
terminal connection torque  
1,7  
8,0  
-
-
Schraube / screw M8  
10  
Nm  
Gewicht  
weight  
G
1500  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine  
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.  
This technical information specifies semiconductor devices but guarantees no characteristics.  
It is valid with the appropriate technical explanations.  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
3
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Ausgangskennlinie IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
TÝÎ = 125°C  
V•Š = 15 V  
2400  
2400  
TÝÎ = 25°C  
TÝÎ = 125°C  
V•Š = 17 V  
V•Š = 15 V  
2100  
2100  
V•Š = 13 V  
V•Š = 11 V  
V•Š = 9 V  
V•Š = 7 V  
1800  
1500  
1200  
900  
600  
300  
0
1800  
1500  
1200  
900  
600  
300  
0
0,0  
0,5  
1,0  
1,5 2,0  
V†Š [V]  
2,5  
3,0  
3,5  
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5  
V†Š [V]  
Übertragungscharakteristik IGBT-Wechselr. (typisch)  
transfer characteristic IGBT-inverter (typical)  
I† = f (V•Š)  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-inverter (typical)  
EÓÒ = f (I†), EÓËË = f (I†)  
V†Š = 20 V  
V•Š = ±15 V, R•ÓÒ = 0,82 Â, R•ÓËË = 0,82 Â, V†Š = 600  
V, TÝÎ = 125°C  
2400  
500  
TÝÎ = 25°C  
TÝÎ = 125°C  
450  
400  
350  
300  
250  
200  
150  
100  
50  
EÓÒ  
EÓËË  
2100  
1800  
1500  
1200  
900  
600  
300  
0
0
5
6
7
8 9  
V•Š [V]  
10  
11  
12  
0
400  
800  
1200  
I† [A]  
1600  
2000  
2400  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
4
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-Inverter (typical)  
EÓÒ = f (R•), EÓËË = f (R•)  
Transienter Wärmewiderstand IGBT-Wechselr.  
transient thermal impedance IGBT-inverter  
ZÚÌœ† = f (t)  
V•Š = ±15 V, I† = 1200 A, V†Š = 600 V, TÝÎ = 125°C  
1000  
100  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
EÓÒ  
EÓËË  
ZÚÌœ† : IGBT  
10  
1
i:  
rÍ[K/kW]: 0,3  
τÍ[s]:  
1
2
0,915  
3
8,06  
0,00382 0,02997 0,05634 0,6897  
4
6,725  
0,1  
0,001  
0
2
4
6
R• [Â]  
8
10  
12  
0,01  
0,1  
t [s]  
1
10  
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)  
reverse bias safe operating area IGBT-inv. (RBSOA)  
I† = f (V†Š)  
Durchlaßkennlinie der Diode-Wechselr. (typisch)  
forward characteristic of diode-inverter (typical)  
IŒ = f (VŒ)  
V•Š = ±15 V, R•ÓËË = 0,82 Â, TÝÎ = 125°C  
2800  
2400  
2000  
1600  
1200  
800  
2400  
TÝÎ = 25°C  
TÝÎ = 125°C  
2100  
1800  
1500  
1200  
900  
600  
300  
0
400  
0
I†, Modul  
I†, Chip  
0
200  
400  
600 800  
V†Š [V]  
1000 1200 1400  
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4  
VŒ [V]  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
5
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (IŒ)  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (R•)  
IŒ = 1200 A, V†Š = 600 V, TÝÎ = 125°C  
R•ÓÒ = 0,82 Â, V†Š = 600 V, TÝÎ = 125°C  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
EØþÊ  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
EØþÊ  
0
400  
800  
1200  
IŒ [A]  
1600  
2000  
2400  
0
2
4
6
R• [Â]  
8
10  
12  
Transienter Wärmewiderstand Diode-Wechselr.  
transient thermal impedance diode-inverter  
ZÚÌœ† = f (t)  
100  
ZÚÌœ† : Diode  
10  
i:  
rÍ[K/kW]: 2,15  
τÍ[s]:  
1
2
3
10,585 10,08  
4
9,185  
0,00285 0,02647 0,07451 0,4452  
1
0,001  
0,01  
0,1  
t [s]  
1
10  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
6
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1200R12KL4C  
Schaltplan / circuit diagram  
Gehäuseabmessungen / package outlines  
prepared by: Mark Münzer  
date of publication: 2004-2-11  
revision: 3.0  
approved by: Christoph Lübke  
7
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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