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IXYH50N120C3

型号：

IXYH50N120C3

描述：

1200V IGBT XPT GenX3[ 1200V XPT IGBT GenX3 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

163 K

下载PDF手册
Advance Technical Information  
1200V XPTTM IGBT  
GenX3TM  
VCES = 1200V  
IC110 = 50A  
VCE(sat) ≤ 3.0V  
tfi(typ) = 57ns  
IXYH50N120C3  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
105  
50  
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
TC = 25°C, 1ms  
230  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
A
750  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 100  
A
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
z
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
International Standard Package  
z
z
PC  
TC = 25°C  
625  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
z
High Power Density  
z
Low Gate Drive Requirement  
Applications  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
z
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
z
4.5  
z
25 μA  
TJ = 125°C  
TJ = 125°C  
250 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
2.5  
3.2  
3.0  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100343(05/11)  
IXYH50N120C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
22  
37  
S
Cies  
Coes  
Cres  
2770  
195  
83  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg(on)  
Qge  
Qgc  
143  
17  
nC  
nC  
nC  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
24  
50  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 40A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
2.58  
240  
57  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 0.5 • VCES, RG = 5Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
1.20  
2.00 mJ  
f
td(on)  
tri  
25  
57  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 125°C  
IC = 40A, VGE = 15V  
Eon  
td(off)  
tfi  
5.14  
274  
98  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 0.5 • VCES, RG = 5Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
1.47  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH50N120C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
13V  
11V  
10V  
9V  
12V  
11V  
8V  
7V  
10V  
9V  
8V  
6V  
5V  
7V  
6V  
5V  
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
9V  
I C = 100A  
8V  
7V  
I C = 50A  
6V  
5V  
I C = 25A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
TJ = 25ºC  
I C = 100A  
TJ = 125ºC  
25ºC  
- 40ºC  
50A  
25A  
6
7
8
9
10  
11  
12  
13  
14  
15  
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYH50N120C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 600V  
I C = 50A  
TJ = - 40ºC  
I
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
C
res  
Ω
dv / dt < 10V / ns  
= 1 MHz  
5
f
10  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N120C3  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
4
3.5  
3
16  
14  
12  
10  
8
6
5
4
3
2
1
0
24  
20  
16  
12  
8
E
E
on - - - -  
VGE = 15V  
E
E
off  
RG = 5  
on - - - -  
off  
Ω ,  
CE = 600V  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
V
I C = 80A  
TJ = 125ºC  
2.5  
2
TJ = 25ºC  
1.5  
1
6
I C = 40A  
4
4
0.5  
0
2
0
0
20  
30  
40  
50  
60  
70  
80  
5
10  
15  
20  
25  
30  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
16  
14  
12  
10  
8
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 5  
VGE = 15V  
TJ = 125ºC, VGE = 15V  
Ω ,  
VCE = 600V  
VCE = 600V  
I C = 80A  
I C = 80A  
6
I C = 40A  
4
I C = 40A  
60  
2
0
40  
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
5
10  
15  
20  
25  
30  
RG - Ohms  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
320  
300  
280  
260  
240  
220  
200  
180  
180  
160  
140  
120  
100  
80  
360  
340  
320  
300  
280  
260  
240  
220  
200  
180  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
I C = 40A  
TJ = 125ºC  
I C = 80A  
60  
60  
TJ = 25ºC  
40  
40  
20  
0
20  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYH50N120C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
160  
140  
120  
100  
80  
34  
32  
30  
28  
26  
24  
22  
20  
18  
240  
200  
160  
120  
80  
75  
65  
55  
45  
35  
25  
15  
tr i  
td(on) - - - -  
tr i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 80A  
TJ = 25ºC  
60  
I C = 40A  
40  
40  
20  
0
0
20  
30  
40  
50  
60  
70  
80  
5
10  
15  
20  
25  
30  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
20  
tr i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
VCE = 600V  
I C = 80A  
60  
I C = 40A  
40  
20  
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_50N120C3(6N)05-12-11  
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