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FZ1200R17KF6B2

型号：

FZ1200R17KF6B2

描述：

Hochstzulassige Werte /最大额定值[ Hochstzulassige Werte / Maximum rated values ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

8 页

PDF大小：

93 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
VCES  
1700  
V
collector-emitter voltage  
TC = 80 °C  
IC,nom.  
IC  
1200  
2400  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
2400  
9,6  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
1200  
2400  
440  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
tp = 1 ms  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
4
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200A, VGE = 15V, Tvj = 25°C  
VCE sat  
2,6  
3,1  
3,1  
3,6  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1200A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 80mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
14,5  
79  
6,5  
V
Gateladung  
gate charge  
V
GE = -15V ... +15V  
QG  
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
4
VCE = 1700V, VGE = 0V, Tvj = 25°C  
VCE = 1700V, VGE = 0V, Tvj = 125°C  
0,03  
16  
2,5  
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
120  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
400  
nA  
prepared by: Oliver Schilling  
date of publication: 4.9.1998  
revision: 2 (serie)  
approved by: Chr. Lübke; 08.10.99  
1(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200A, VCE = 900V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
GE = ±15V, RG = 1,2Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C  
C = 1200A, VCE = 900V  
GE = ±15V, RG = 1,2Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C  
C = 1200A, VCE = 900V  
GE = ±15V, RG = 1,2Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C  
C = 1200A, VCE = 900V  
GE = ±15V, RG = 1,2Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C  
C = 1200A, VCE = 900V, VGE = 15V  
G = 1,2Ω, Tvj = 125°C, LS = 50nH  
IC = 1200A, VCE = 900V, VGE = 15V  
G = 1,2Ω, Tvj = 125°C, LS = 50nH  
P ≤ 10µsec, VGE ≤ 15V  
td,on  
0,3  
0,3  
µs  
µs  
I
Anstiegszeit (induktive Last)  
rise time (inductive load)  
V
tr  
0,16  
0,16  
µs  
µs  
I
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
V
td,off  
1,1  
1,1  
µs  
µs  
I
Fallzeit (induktive Last)  
fall time (inductive load)  
V
tf  
0,13  
0,14  
µs  
µs  
I
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
R
Eon  
330  
480  
mWs  
mWs  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
R
Eoff  
t
Kurzschlußverhalten  
SC Data  
TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt  
ISC  
4800  
12  
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
pro Zweig / per arm  
0,08  
mΩ  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
IF = 1200A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
IRM  
Qr  
2,1  
2,5  
2,3  
V
V
forward voltage  
IF = 1200A, VGE = 0V, Tvj = 125°C  
1,95  
IF = 1200A, - diF/dt = 7200A/µsec  
Rückstromspitze  
peak reverse recovery current  
V
R = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
F = 1200A, - diF/dt = 7200A/µsec  
R = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
F = 1200A, - diF/dt = 7200A/µsec  
R = 900V, VGE = -10V, Tvj = 25°C  
700  
A
A
1000  
I
Sperrverzögerungsladung  
recovered charge  
V
160  
350  
µAs  
µAs  
I
Abschaltenergie pro Puls  
reverse recovery energy  
V
Erec  
90  
mWs  
mWs  
VR = 900V, VGE = -10V, Tvj = 125°C  
180  
2(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
0,013  
0,025  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per module  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCK  
0,008  
K/W  
°C  
λPaste = 1 W/m*K  
/
λgrease = 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
150  
Betriebstemperatur  
operation temperature  
Top  
-40  
-40  
125  
125  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
internal insulation  
AlN  
17  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
10  
CTI  
275  
comperative tracking index  
M1  
M2  
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
8 - 10  
Gewicht  
weight  
G
1050  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I C = f (VCE)  
VGE = 15V  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
Tj = 25°C  
Tj = 125°C  
600  
400  
200  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
I C = f (VCE)  
Tvj = 125°C  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
VGE = 20V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 9V  
VGE = 8V  
600  
400  
200  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
4(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 20V  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
Tj = 25°C  
Tj = 125°C  
600  
400  
200  
0
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
I F = f (VF)  
Forward characteristic of inverse diode (typical)  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
Tj = 125°C  
Tj = 25°C  
600  
400  
200  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
VF [V]  
5(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
Rgon = Rgoff =1,2 Ω, VCE = 900V, Tj = 125°C, VGE = ± 15V  
1200  
1000  
800  
600  
400  
200  
0
Eoff  
Eon  
Erec  
0
500  
1000  
1500  
2000  
2500  
IC [A]  
Schaltverluste (typisch)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
Switching losses (typical)  
IC = 1200A , VCE = 900V , Tj = 125°C, VGE = ± 15V  
1400  
Eoff  
1200  
1000  
800  
600  
400  
200  
0
Eon  
Erec  
0
2
4
6
8
10  
RG [Ω]  
6(8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
Zth:Diode  
Zth:IGBT  
0,001  
0,001  
0,01  
0,1  
1
10  
100  
t [sec]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
: IGBT  
: Diode  
: Diode  
1,25  
0,003  
2,46  
0,003  
6,15  
0,05  
2,6  
3
τi [sec]  
ri [K/kW]  
τi [sec]  
0,1  
0,95  
4,57  
0,75  
13,4  
4,57  
0,45  
0,045  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA)  
Rg = 1,2 Ohm, Tvj= 125°C  
3000  
2500  
2000  
1500  
1000  
500  
IC,Modul  
IC,Chip  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
VCE [V]  
Seite/page 7 (8)  
FZ1200R17KF6B2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 17 KF6 B2  
Äußere Abmessungen / external dimensions  
8(8)  
FZ1200R17KF6B2  
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