PZT2222A
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
200
500
V
= 30 V
I /I = 10
C B
CC
I /I = 10
300
200
T = 25°C
J
C B
100
t′ = t - 1/8 t
f
s
s
I = I
B1 B2
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
10
10
R
S
R
S
R
S
= OPTIMUM
f = 1.0 kHz
= 50 μA
= SOURCE
= RESISTANCE
I
= 1.0 mA, R = 150 Ω
S
C
8.0
8.0
500 μA, R = 200 Ω
100 μA, R = 2.0 kΩ
50 μA, R = 4.0 kΩ
I
C
S
100 μA
500 μA
1.0 mA
S
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
= 20 V
CE
T = 25°C
20
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
30
I , COLLECTOR CURRENT (mA)
50 70 100
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current–Gain Bandwidth Product
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Any changing of specification will not be informed individual
Page 3 of 4
01-Jun-2002 Rev. A
