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PZT2907A

型号:

PZT2907A

描述:

硅平面中功率晶体管[ Silicon Planar Medium Power Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

2 页

PDF大小:

292 K

PZT2907A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-223  
DESCRIPTION  
The PZT2907A is designed for general purpose amplifier  
and high-speed switching, medium power switching applications.  
MARKING  
Collector  
Emitter  
2907A  
  
Base  
= Date code  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
6.30  
6.70  
3.30  
1.42  
Max.  
6.70  
7.30  
3.70  
1.90  
Min.  
Max.  
0.10  
2.00  
0.35  
1.05  
B
C
E
A
B
C
D
E
F
I
G
H
J
K
L
0.02  
1.50  
0.25  
0.85  
4.60 REF.  
2.30 REF.  
0.60  
0.02  
0°  
0.80  
0.10  
10°  
M
N
2.90  
3.10  
13 TYP.  
O
MAXIMUM RATINGS (TA=25 °C, unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
V
-60  
-5  
V
mA  
-600  
1.5  
Total Power Dissipation  
Junction, Storage Temperature  
PD  
W
TJ, TSTG  
+150, -55 ~ +150  
ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Collector - Base Breakdown Voltage  
V(BR)CBO  
-60  
-
-
V
IC = -10uA  
Collector - Emitter Breakdown  
Voltage  
V(BR)CEO  
-60  
-
-
V
IC = -10mA  
Emitter - Base Breakdown Voltage  
Collector Cut - Off Current  
Emitter Cut - Off Current  
V(BR)EBO  
ICBO  
-5  
-
-
V
nA  
nA  
V
IC = -10uA  
-
-
-
-10  
-50  
-0.4  
-1.6  
-1.3  
-2.6  
-
VCB = -50V  
ICEX  
-
VCE= -30V, VBE = -0.5V  
IC = -150mA, IB = -15mA  
IC = -500mA, IB = -50mA  
IC = -150mA, IB = -15mA  
IC = -500mA, IB = -50mA  
VCE = -10V, IC = -100 uA  
VCE = -10V, IC = -1mA  
VCE = -10V, IC = -10mA  
VCE = -10V, IC = -150mA  
VCE = -10V, IC = -500mA  
VCE(sat)1  
VCE(sat)2  
VBE(sat)  
VBE(sat)  
hFE1  
-
-0.2  
Collector - Emitter Saturation Voltage  
Base - Emitter Voltage  
-
-0.5  
V
-
-
V
-
-
V
75  
100  
100  
100  
50  
-
hFE2  
-
-
DC Current Gain  
hFE3  
-
180  
-
-
hFE4  
300  
-
hFE5  
VCB = -20V, IC = -50mA,  
f =100 MHz  
Transition Frequency  
fT  
200  
-
-
-
-
MHz  
pF  
Collector Output Capacitance  
COB  
8
VCB = -10 V, f = 1 MHz  
*Pulse TestPulse width 380 us, Duty cycle 2 %  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
31-May-2010 Rev. B  
Page 1 of 2  
PZT2907A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
31-May-2010 Rev. B  
Page 2 of 2  
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