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PZT3019

型号:

PZT3019

描述:

外延平面晶体管[ Epitaxial Planar Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

1 页

PDF大小:

544 K

PZT3019  
NPN Transistor  
Epitaxial Planar Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
SOT-223  
Description  
The PZT3019 is designed for general  
purpose amplifier applications and  
switching requiring collector currents 1A.  
Millimeter  
Min. Max.  
13̓TYP.  
2.30 REF.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
6.70  
2.90  
0.02  
0̓  
B
J
1
2
3
4
5
3 0 1 9  
Date Code  
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
o
Ta=25  
MAXIMUM RATINGS  
ABSOLUTE  
Symbol  
C
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
140  
80  
7
V
V
VCEO  
VEBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
A
IC  
PD  
1
2
W
Total Power Dissipation  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Max  
Test Conditions  
IC=100µA  
IC=30mA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
140  
-
-
-
-
-
-
-
-
V
80  
7
-
V
IE=100 µA  
VCB= 90V  
50  
50  
nA  
nA  
Emitter-Base Cutoff Current  
IEBO  
VCE(sat)  
VBE(sat)  
hFE1  
-
VEB=  
5V  
-
Collector Saturation Voltage  
Base Saturation Voltage  
-
-
-
-
-
-
IC=150mA,IB=15mA  
IC=150mA,IB=15mA  
VCE= 10V, IC=0.1mA  
V
V
0.2  
-
1.1  
-
-
50  
90  
100  
hFE2  
10V, IC=10mA  
VCE=  
VCE=  
DC Current Gain  
hFE3  
10V, IC=150mA  
10V, IC=500mA  
10V, IC=1000mA  
300  
-
hFE4  
VCE=  
VCE=  
50  
15  
100  
-
-
-
-
-
hFE5  
Gain-Bandwidth Product  
Output Capacitance  
-
fT  
MH  
VCE= 50mV, IC= 50mA,  
f=100MHz  
VCB= 10V, f=1MHz,IE=0  
z
pF  
12  
Cob  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 1  
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