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PZT3904

型号：

PZT3904

描述：

NPN通用放大器[ NPN General Purpose Amplifier ]

品牌：

PFS[ SHENZHEN PING SHENG ELECTRONICS CO., LTD. ]

页数：

6 页

PDF大小：

544 K

下载PDF手册
2N3904/MMBT3904/PZT3904  
2N3904  
MMBT3904  
PZT3904  
C
C
E
E
C
TO-92  
C
B
B
SOT-23  
Mark: 1A  
B
E
SOT-223  
NPN General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch.  
The useful dynamic range extends to 100 mA as a switch and to  
100 MHz as an amplifier.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
60  
V
V
6.0  
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N3904  
*MMBT3904  
**PZT3904  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
Web Site:  
WWW.PS-PFS.COM  
2N3904/MMBT3904/PZT3904  
NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown  
IC = 1.0 mA, IB = 0  
40  
V
Voltage  
V(BR)CBO  
V(BR)EBO  
IBL  
Collector-Base Breakdown Voltage  
60  
V
V
IC = 10 µA, IE = 0  
Emitter-Base Breakdown Voltage  
Base Cutoff Current  
6.0  
IE = 10 µA, IC = 0  
VCE = 30 V, VEB = 3V  
VCE = 30 V, VEB = 3V  
50  
50  
nA  
nA  
ICEX  
Collector Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 0.1 mA, VCE = 1.0 V  
IC = 1.0 mA, VCE = 1.0 V  
IC = 10 mA, VCE = 1.0 V  
IC = 50 mA, VCE = 1.0 V  
IC = 100 mA, VCE = 1.0 V  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
40  
70  
100  
60  
300  
30  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.2  
0.3  
0.85  
0.95  
V
V
V
V
0.65  
300  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
Output Capacitance  
Input Capacitance  
IC = 10 mA, VCE = 20 V,  
f = 100 MHz  
VCB = 5.0 V, IE = 0,  
f = 1.0 MHz  
VEB = 0.5 V, IC = 0,  
f = 1.0 MHz  
IC = 100 µA, VCE = 5.0 V,  
RS =1.0kΩ,f=10 Hz to 15.7kHz  
MHz  
pF  
4.0  
8.0  
5.0  
Cobo  
Cibo  
NF  
pF  
Noise Figure  
dB  
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
VCC = 3.0 V, VBE = 0.5 V,  
IC = 10 mA, IB1 = 1.0 mA  
VCC = 3.0 V, IC = 10mA  
IB1 = IB2 = 1.0 mA  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
200  
50  
ts  
tf  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%  
Spice Model  
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2  
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p  
Itf=.4 Vtf=4 Xtf=2 Rb=10)  
Web Site:  
WWW.PS-PFS.COM  
2N3904/MMBT3904/PZT3904  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
500  
V CE = 5V  
0.15  
0.1  
β
= 10  
400  
125 °C  
125 °C  
300  
25 °C  
200  
25 °C  
0.05  
- 40 °C  
100  
- 40 °C  
0
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
V
= 5V  
1
β
= 10  
CE  
- 40 °C  
- 40 °C  
0.8  
0.6  
0.4  
25 °C  
25 °C  
125 °C  
125 °C  
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Capacitance vs  
Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
10  
500  
f = 1.0 MHz  
VCB= 30V  
100  
10  
1
5
4
C
ibo  
3
2
C
0.1  
obo  
1
0.1  
25  
50  
75  
100  
125  
150  
1
10  
100  
°
TA - AMBIENT TEMPERATURE ( C)  
REVERSE BIAS VOLTAGE (V)  
Web Site:  
WWW.PS-PFS.COM  
2N3904/MMBT3904/PZT3904  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Noise Figure vs Frequency  
Noise Figure vs Source Resistance  
12  
12  
10  
8
I
= 1.0 mA  
C
R
V CE = 5.0V  
I
= 1.0 mA  
C
= 200Ω  
S
10  
8
I
= 50 µA  
= 1.0 kΩ  
I
= 5.0 mA  
C
S
C
R
I
= 50 µA  
C
I
= 0.5 mA  
C
R
6
6
= 200Ω  
S
I
= 100 µA  
4
4
C
2
2
I
= 100 µA, R = 500 Ω  
C
S
0
0
0.1  
1
10  
100  
0.1  
1
10  
100  
f - FREQUENCY (kHz)  
R
S
- SOURCE RESISTANCE (  
)
kΩ  
Power Dissipation vs  
Ambient Temperature  
Current Gain and Phase Angle  
vs Frequency  
1
0.75  
0.5  
50  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
20  
40  
h fe  
SOT-223  
60  
80  
100  
120  
TO-92  
θ
SOT-23  
140  
160  
180  
VCE = 40V  
0.25  
0
I C = 10 mA  
0
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
f - FREQUENCY (MHz)  
TEMPERATURE (oC)  
Turn-On Time vs Collector Current  
Rise Time vs Collector Current  
500  
500  
100  
I
c
I
c
IB1= IB2  
=
VCC = 40V  
IB1= IB2=  
10  
10  
40V  
15V  
100  
T
= 25°C  
J
t
@ VCC = 3.0V  
r
T
= 125°C  
J
2.0V  
t
10  
5
10  
5
@ VCB = 0V  
d
1
10  
100  
1
10  
- COLLECTOR CURRENT (mA)  
100  
I
- COLLECTOR CURRENT (mA)  
C
I
C
Web Site:  
WWW.PS-PFS.COM  
2N3904/MMBT3904/PZT3904  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Storage Time vs Collector Current  
Fall Time vs Collector Current  
500  
500  
100  
I
I
c
c
IB1= IB2  
=
IB1= IB2  
=
10  
10  
T
= 25°C  
J
T
= 125°C  
VCC = 40V  
J
100  
T
= 125°C  
J
T
= 25°C  
J
10  
5
10  
5
1
10  
100  
1
10  
- COLLECTOR CURRENT (mA)  
100  
I
- COLLECTOR CURRENT (mA)  
I
C
C
Current Gain  
Output Admittance  
500  
100  
100  
10  
1
V
= 10 V  
V
= 10 V  
CE  
CE  
f = 1.0 kHz  
T
f = 1.0 kHz  
T
= 25oC  
= 25oC  
A
A
10  
0.1  
1
10  
0.1  
1
10  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Input Impedance  
Voltage Feedback Ratio  
100  
10  
7
V
= 10 V  
V
= 10 V  
CE  
CE  
f = 1.0 kHz  
T
f = 1.0 kHz  
T
= 25oC  
= 25oC  
A
A
5
4
10  
1
3
2
0.1  
1
0.1  
1
10  
0.1  
1
10  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Web Site:  
WWW.PS-PFS.COM  
2N3904/MMBT3904/PZT3904  
NPN General Purpose Amplifier  
(continued)  
3.0 V  
Test Circuits  
275 Ω  
300 ns  
10.6 V  
Duty Cycle = 2%  
10 KΩ  
0
C1 < 4.0 pF  
- 0.5 V  
< 1.0 ns  
FIGURE 1: Delay and Rise Time Equivalent Test Circuit  
3.0 V  
t1  
10 < t1  
< 500 µs  
10.9 V  
275 Ω  
Duty Cycle = 2%  
10 KΩ  
0
C1 < 4.0 pF  
1N916  
- 9.1 V  
< 1.0 ns  
FIGURE 2: Storage and Fall Time Equivalent Test Circuit  
Web Site:  
WWW.PS-PFS.COM  
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