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PZT3904

型号：

PZT3904

描述：

通用晶体管[ General Purpose Transistor ]

品牌：

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数：

5 页

PDF大小：

163 K

下载PDF手册
PZT3904  
NPN Silicon  
General Purpose Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
SOT-223  
5ꢄꢂꢅꢇ  
5ꢄꢂꢅꢇ  
C
1.  
2.  
3.  
BASE  
COLLECTOR  
EMITTER  
FEATURES  
ꢄꢂꢈꢇ  
E
ꢅꢈefꢅe  
ꢅꢈefꢅe  
C
B
Power dissipation  
P CM : 1 W˄Tamb=25ć˅  
Collector current  
ꢃ ꢂ ꢄ ꢄ f ꢄ ꢂ ꢅ ꢄ  
ꢁe  
fꢃe  
I CM : 0.2 A  
ꢈ ꢂ ꢃ ꢄ  
Collector-base voltage  
V(BR)CBO : 6 0 V  
ꢄ ꢂ ꢉ ꢅ  
ꢁ ꢂ ꢃ ꢄ f ꢄ ꢂ ꢅ ꢄ  
Operating and storage junction temperature range  
TJˈTstg: -55ć to +150ć  
1
2
3
Unit : mm  
ELECTRICAL CHARACTERISTICS (Tamb=25Я  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO Ic=10µA,IE=0  
V(BR)CEO Ic=1mA,IB=0  
V(BR)EBO IE=10µA,IC=0  
60  
40  
6
V
V
V
ICBO  
IEBO  
VCB=60V,IE=0  
0.1  
0.1  
µA  
µA  
Emitter cut-off current  
VEB=5V,IC=0  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
hFE(5)  
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
fT  
VCE=10V,IC=0.1mA  
VCE=1V,IC=1mA  
40  
70  
DC current gain  
VCE=1V,IC=10mA  
VCE=1V,IC=50mA  
VCE=1V,IC=100mA  
IC=10mA,IB=1mA  
IC=50mA,IB=5mA  
IC=10mA,IB=1mA  
IC=50mA,IB=5mA  
VCE=20V,IC=10mA,f=100MHz  
VCB=5V,IE=0,f=1MHz  
100  
60  
300  
30  
0.2  
0.3  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
0.65  
300  
0.85  
0.95  
V
V
Transition frequency  
MHz  
pF  
Collector output capacitance  
Cob  
4
5
VCE=5V,Ic=0.1mA,  
Noise figure  
NF  
dB  
f=10HZ to 15.7KHz,Rg=1Kȍ  
Delay time  
Rise time  
Storage time  
Fall time  
td  
tr  
35  
35  
nS  
nS  
nS  
nS  
V
CC=3V,  
IC=10mA,VBE(off)=0.5V,IB1=1mA  
VCC=3V, IC=10mA  
tS  
tf  
200  
50  
IB1= IB2= 1mA  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 5  
PZT3904  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
+3 V  
+3 V  
Duty Cycle = 2%  
300 ns  
t
10 < t < 500  
s
1
1
+10.9 V  
Duty Cycle = 2%  
+10.9 V  
< 1 ns  
275  
275  
10 k  
10 k  
0
–0.5 V  
C
< 4 pF*  
C < 4 pF*  
S
S
1N916  
–9.1 V  
′
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time  
Equivalent Test Circuit  
Figure 2. Storage and Fall Time  
Equivalent Test Circuit  
TYPICAL TRANSIENT CHARACTERISTICS  
T
T
= 25°C  
= 125°C  
J
J
10  
5000  
V
= 40 V  
CC  
/I = 10  
3000  
2000  
7.0  
I
C B  
5.0  
1000  
700  
C
ibo  
500  
3.0  
2.0  
Q
T
300  
200  
C
obo  
Q
A
100  
70  
1.0  
0.1  
50  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
Reverse Bias Voltage (V)  
I , Collector Current (mA)  
C
Figure 3. Capacitance  
Figure 4. Charge Data  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 5  
PZT3904  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
500  
500  
I
/I = 10  
V
= 40 V  
C B  
CC  
/I = 10  
300  
200  
300  
200  
I
C B  
100  
70  
100  
70  
t @ V  
= 3.0 V  
CC  
r
50  
50  
30  
20  
30  
20  
40 V  
15 V  
10  
10  
2.0 V  
50 70 100  
7
5
7
5
t
@ V  
= 0 V  
d
OB  
20 30  
, Collector Current (mA)  
1.0  
2.0 3.0  
5.0 7.0 10  
200  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
I
I , Collector Current (mA)  
C
C
Figure 5. Turn–On Time  
Figure 6. Rise Time  
500  
500  
1
′ = t – / t  
s s 8 f  
= I  
B1 B2  
t
I
V
I
= 40 V  
CC  
300  
200  
300  
200  
= I  
I
/I = 20  
I
/I = 10  
B1 B2  
C B  
C B  
I
/I = 20  
C B  
100  
70  
100  
70  
I
/I = 20  
C B  
50  
50  
I
/I = 10  
I
/I = 10  
C B  
C B  
30  
20  
30  
20  
10  
10  
7
5
7
5
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
I
, Collector Current (mA)  
I , Collector Current (mA)  
C
C
Figure 7. Storage Time  
Figure 8. Fall Time  
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(V  
= 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)  
CE  
A
12  
14  
SOURCE RESISTANCE = 200  
f = 1.0 kHz  
I
= 1.0 mA  
C
12  
10  
8
I
= 1.0 mA  
C
10  
8
I
= 0.5 mA  
C
SOURCE RESISTANCE = 200  
= 0.5 mA  
I
= 50  
A
A
C
I
C
6
4
I
= 100  
SOURCE RESISTANCE = 1.0 k  
= 50  
C
6
4
2
0
I
A
C
2
0
SOURCE RESISTANCE = 500  
I
= 100  
A
C
0.1  
0.2  
0.4  
1.0  
2.0  
4.0  
10  
20  
40  
100  
0.1  
0.2  
0.4  
1.0  
2.0  
4.0  
10  
20  
40  
100  
f, Frequency (kHz)  
R
, Source Resistance (k OHMS)  
S
Figure 9.  
Figure 10.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 3 of 5  
PZT3904  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
h PARAMETERS  
(V  
= 10 Vdc, f = 1.0 kHz, T = 25°C)  
CE  
A
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
2
1
30  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
I , Collector Current (mA)  
C
2.0 3.0  
5.0  
10  
I
, Collector Current (mA)  
C
Figure 11. Current Gain  
Figure 12. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
2.0  
3.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
I , Collector Current (mA)  
C
1.0  
2.0 3.0  
5.0  
10  
I
, Collector Current (mA)  
C
Figure 13. Input Impedance  
Figure 14. Voltage Feedback Ratio  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T
= +125°C  
J
V
= 1.0 V  
CE  
+25  
°
C
C
0.7  
0.5  
–55  
°
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
200  
I
, Collector Current (mA)  
C
Figure 15. DC Current Gain  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 4 of 5  
PZT3904  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
1.0  
0.8  
0.6  
0.4  
T
= 25°C  
J
I
= 1.0 mA  
10 mA  
30 mA  
100 mA  
C
0.2  
0
0.01  
0.02  
0.03  
0.05  
0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I
, Base Current (mA)  
B
Figure 16. Collector Saturation Region  
1.2  
1.0  
T
= 25°C  
J
V
@ I /I =10  
C B  
BE(sat)  
+25  
°
C TO +125  
°
C
1.0  
0.8  
0.5  
0
FOR V  
VC  
CE(sat)  
–55  
°
C TO +25  
°
C
V
@ V  
=1.0 V  
CE  
BE  
0.6  
0.4  
–0.5  
–1.0  
–55  
°
C TO +25  
°
C
V
@ I /I =10  
C B  
CE(sat)  
+25°C TO +125°C  
FOR V  
BE(sat)  
0.2  
0
–1.5  
–2.0  
VB  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80  
I , Collector Current (mA)  
C
100 120 140  
160 180 200  
I
, Collector Current (mA)  
C
Figure 17. “ON” Voltages  
Figure 18. Temperature Coefficients  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 5 of 5  
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