PZT3906
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT3906 is designed for general
purpose switching and amplifier
applications.
Millimeter
Min. Max.
13̓TYP.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
3 9 0 6
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
Date Code
2.30 REF.
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
B
C
E
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
H
ABSOLUTE MAXIMUM RATINGS Tamb =25oC, unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
-40
-5
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
mA
IC
Collector Current
-200
Total Power Dissipation
PD
W
1.5
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICES
Min
Max
Test Conditions
IC=-10 µA
IC=-1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-40
-
-
-
-
-
-
-
-
-
V
-40
-5
-
V
IE=-10µA
VCB=-30V
-50
-50
nA
nA
Emitter-Base Cutoff Current
-
IEBO
VEB=-
3V
-0.25
-0.4
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
-
-
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Collector Saturation Voltage
V
-0.2
-0.65
-0.85
-
-0.84
-
V
V
Base Saturation Voltage
DC Current Gain
-
60
-0.95
-
-
VCE=-1V, IC=-0.1mA
*hFE2
-
80
VCE=-1V, IC=-1mA
VCE=- 1V, IC=-10mA
VCE=- 1V, IC=-50mA
*hFE3
-
-
100
60
300
-
*hFE4
-
-
-
*hFE5
-
-
VCE=-1V, IC=-100mA
VCE=- 20 V, IC=-10mA
VCB=-5V, f=1MHz
30
250
-
Gain-Bandwidth Product
Output Capacitance
fT
MH
pF
z
, f=100MHz
4.5
Cob
≦
≦
*Pulse test: Pulse width 300 s, Duty Cycle 2%
µ
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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