PZT4401
NPN Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZT4401 is designed for general
purpose switching and amplifier applications.
Features
*High Power Dissipation: 1500mW at 25oC
*High DC Current Gain: 100~300 at 150mA
*Complementary to PZT4403
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
4 4 0
1
6.30
3.30
3.30
1.40
Date Code
0.60
0.25
0.80
0.35
H
B
C
E
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
60
Units
VCBO
Collector-Base Voltage
V
V
VCEO
VEBO
IC
40
Collector-Emitter Voltage
Emitter-Base Voltage
5
V
mA
Collector Current (Continous)
Total Power Dissipation
600
1.5
W
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICES
Min
60
Max
Test Conditions
IC= 100µA
IC= 1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
40
V
V
IE= 10µA
VCE= 35V,VBE=0.4V
5
-
100
400
750
nA
-
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
-
-
-
IC=150mA,IB=15mA
IC=500mA,IB=50mA
mV
mV
mV
V
Collector Saturation Voltage
Base Satruation Voltage
-
-
950
1.2
IC=
150mA,IB=15mA
-
*VBE(sat)2 750
IC=500mA,IB=50mA
-
-
-
-
-
*hFE1
*hFE2
*hFE3
20
40
80
VCE= 1V, IC=0.1mA
VCE= 1V, IC=1mA
DC Current Gain
-
VCE= 1V, IC=10 mA
-
-
-
-
*hFE4
*hFE5
300
-
100
40
VCE= 1V, IC=150mA
VCE= 2V, IC=500mA
Gain-Bandwidth Product
Output Capacitance
-
fT
MH
pF
VCE= 10V, IC= 20mA,f=100MHz
VCB= 5 V, f=1MHz
250
-
z
6.5
Cob
≦
≦
*Pulse width 380 s, Duty Cycle 2%
µ
Classification of hFE4
R
Rank
Q
100~210
Range
190~300
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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