PZT4672
NPN Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZT4672 is designed for low
frequency amplifier applications.
Features
*Excellent DC Current Gain Characteristic
*Low Saturation Voltage, Typically
VCE(sat)=0.1V at IC/IB=1A/50mA
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
4 6 7
2
6.30
3.30
3.30
1.40
Date Code
0.60
0.25
0.80
0.35
H
B
C
E
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
60
Units
VCBO
Collector-Base Voltage
V
V
V
VCEO
VEBO
50
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
6
2
5
2
IC
A
Collector Current (Pulse PW=10ms)
Total Power Dissipation
PD
W
O
C
Storage Temperature
Junction and
TJ,
-55~+150
Tstg
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
V
t
Parameter
Collector-Base Breakdown Voltage
Symbol
BVCBO
*BVCEO
BVEBO
Min
Max
Test Conditions
IC= 50µA,IE=0
IC= 1mA,IB=0
IE= 50µA,IC=0
-
-
-
-
-
-
60
50
6
Collector-Emitter Breakdown Voltage
V
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
V
ICBO
IEBO
-
-
-
100
nA
nA
V
VCB= 60V,IE=0
VEB=5V,IC=0
-
-
100
Collector Saturation Voltage
DC Current Gain
*
VCE(sat)
IC=1A,IB=50mA
0.1
-
0.35
*
hFE
120
400
-
VCE= 2V, IC=500mA
Gain-Bandwidth Product
Output Capacitance
-
-
fT
210
25
MH
VCE= 2V, IC= 500mA,f=100MHz
VCB=10V, f=1MHz,IE=0
z
pF
-
Cob
≦
≦
*Pulse width 380 s, Duty Cycle 2%
µ
Classification of hFE
B
Rank
A
120~240
Range
200~400
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
