PZT5401
PNP Epitaxial Planar Transistor
P b
COLLECTOR
2, 4
SOT-223
Lead(Pb)-Free
4
1. BASE
BASE
1
2.COLLECTOR
1
3.EMITTER
4.COLLECTOR
2
3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS
Rating
(T =25 C)
A
Symbol
Value
Unit
V
V
-160
Collector to Base Voltage
CBO
V
V
-150
-5
CEO
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
V
A
V
EBO
I (DC)
C
-600
1.5
Total Device Disspation T =25°C
P
W
˚C
˚C
a
D
+150
Junction Temperature
Storage Temperature
Tj
Tstg
-55 to +150
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I =-100µA, I =0
Symbol
Min
Max
Max
Unit
BV
BV
BV
I
-160
-
-
V
V
V
CBO
CEO
EBO
C
E
Collector-Emitter Breakdown Voltage(1)
I =-1mA, I =0
-150
-5
-
-
-
-
C
B
Emitter-Base Breakdown Voltage
I =-10µA, I =0
E
C
Collector Cut-Oꢀ Current
=-120V, I =0
-
-
-
-
-50
-50
nA
nA
CBO
V
CB
E
Emitter-Cut-Oꢀ Current
I
EBO
V =-3V, I =0
EB
C
WEITRON
http://www.weitron.com.tw
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14-Aug-07
