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PZT559A

型号:

PZT559A

描述:

硅平面中功率晶体管[ Silicon Planar Medium Power Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

4 页

PDF大小:

704 K

PZT559A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SOT-223  
The PZT559A is designed for general purpose switching  
and amplifier applications.  
FEATURES  
4 Amps continuous current, up to 10 Amps peak current.  
Excellent gain characteristic specified up to 3 Amps  
Very low saturation voltages  
MARKING  
559A  
ꢁꢁꢁꢁ  
Date code  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
6.30  
6.70  
3.30  
1.42  
Max.  
6.70  
7.30  
3.70  
1.90  
Min.  
Max.  
0.10  
2.00  
0.35  
1.05  
A
B
C
D
E
F
I
G
H
J
K
L
0.02  
1.50  
0.25  
0.85  
PACKAGE INFORMATION  
Package  
MPQ  
Leader Size  
4.60 REF.  
2.30 REF.  
0.60  
0.02  
0.80  
0.10  
M
N
2.90  
3.10  
SOT-223  
2.5K  
13’ inch  
13 TYP.  
O
0°  
10°  
Collector  
2
4
1
Base  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
-180  
-140  
V
-7  
V
A
-4  
Collector Current (Pulse)  
Total Power Dissipation 1  
Total Power Dissipation 2  
ICM  
-10  
A
3
1.6  
W
W
PD  
Junction, Storage Temperature  
TJ, TSTG  
+150, -55~150  
Notes  
1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.  
2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
28-Apr-2011 Rev. A  
Page 1 of 4  
PZT559A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC= -100uA, IE=0  
Collector - Base Breakdown Voltage  
BVCBO  
-180  
-
-
V
Increased Operating Voltage  
BVCER  
BVCEO  
-180  
-140  
-
-
-
-
V
V
IC= -1uA, RB1K  
Collector - Emitter Breakdown  
Voltage  
IC= -10mA, IB=0  
Emitter - Base Breakdown Voltage  
Collector Cut - Off Current  
BVEBO  
ICBO  
-7  
-
-
-
-20  
-20  
-10  
-60  
-80  
-120  
-360  
-1.04  
-0.93  
-
V
IE= -100uA, IC=0  
VCB= -150V, IE=0  
VCB = -150V, R1KΩ  
VEB= -6V, IC=0  
-
nA  
nA  
nA  
ICER  
-
-
Emitter Cut - Off Current  
IEBO  
-
-
VCE(sat)1  
VCE(sat)2  
VCE(sat)3  
VCE(sat)4  
VBE(sat)  
VBE(on)  
*hFE1  
*hFE2  
*hFE3  
*hFE4  
fT  
-
-40  
-55  
-85  
-250  
-940  
-830  
225  
200  
80  
mV IC= -100mA, IB= -5mA  
mV IC= -500mA, IB= -50mA  
mV IC= -1A, IB= -100mA  
mV IC= -3A, IB= -300mA  
-
Collector - Emitter Saturation Voltage  
-
-
-
V
V
IC= -3A, IB= -300mA  
VCE= -5V, IC= -3A  
VCE= -5V, IC= -10 mA  
VCE= -5V, IC = -1A  
VCE= -5V, IC = -3A  
VCE= -5V, IC = -10A  
Base - Emitter Voltage  
DC Current Gain  
-
100  
100  
300  
-
45  
-
5
-
VCE= -10V, IC= -100mA,  
f=50 MHz  
Transition Frequency  
-
120  
33  
-
MHz  
pF  
Collector Output Capacitance  
COB  
-
-
VCB= -10 V, f=1 MHz  
Turn-on  
Switching Time  
Ton  
-
42  
-
VCC= -50V, IC = -1A,  
IB1= -IB2 = -100mA  
nS  
Turn-off  
Toff  
-
636  
-
*Measured under pulsed condition. Pulse width = 300 us, Duty cycle 2 %  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
28-Apr-2011 Rev. A  
Page 2 of 4  
PZT559A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeC
ndividually.  
28-Apr-2011 Rev. A  
Page 3 of 4  
PZT559A  
PNP Silicon  
Silicon Planar Medium Power Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
28-Apr-2011 Rev. A  
Page 4 of 4  
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