PZT6718
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT6718 is designed for general
purpose medium power amplifier and
switching.
Millimeter
Millimeter
Min. Max.
13̓TYP.
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
2.30 REF.
6 7 1 8
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
100
5
V
V
V
A
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1
W
Total Power Dissipation
PD
1.5
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
Max
Test Conditions
IC= 100µA
IC= 1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
100
100
V
V
IE= 10µA
VCB= 80V
5
-
100
350
nA
Collector Saturation Voltage
-
*VCE(sat)
-
-
-
IC=350mA,IB=35mA
mV
*hFE1
*hFE2
*hFE3
80
100
20
-
310
-
VCE= 1V, IC=50mA
VCE= 1V, IC=250mA
DC Current Gain
-
-
-
VCE= 1V, IC=500mA
Gain-Bandwidth Product
Output Capacitance
-
50
-
fT
MH
VCE= 10V, IC= 50mA,f=100MHz
VCB=10V, f=1MHz
z
pF
20
Cob
≦
≦
*Pulse width 380 s, Duty Cycle 2%
µ
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 1 of 2
01-Jun-2002 Rev. A