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PZT6718

型号:

PZT6718

描述:

外延平面晶体管[ Epitaxial Planar Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

2 页

PDF大小:

541 K

PZT6718  
NPN Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
RoHS Compliant Product  
SOT-223  
Description  
The PZT6718 is designed for general  
purpose medium power amplifier and  
switching.  
Millimeter  
Millimeter  
Min. Max.  
13̓TYP.  
REF.  
REF.  
Min.  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
6.70  
2.90  
0.02  
0̓  
B
J
2.30 REF.  
6 7 1 8  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
Date Code  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
o
Ta=25  
MAXIMUM RATINGS  
ABSOLUTE  
Symbol  
C
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
100  
100  
5
V
V
V
A
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
1
W
Total Power Dissipation  
PD  
1.5  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Max  
Test Conditions  
IC= 100µA  
IC= 1mA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-
-
-
-
-
-
-
100  
100  
V
V
IE= 10µA  
VCB= 80V  
5
-
100  
350  
nA  
Collector Saturation Voltage  
-
*VCE(sat)  
-
-
-
IC=350mA,IB=35mA  
mV  
*hFE1  
*hFE2  
*hFE3  
80  
100  
20  
-
310  
-
VCE= 1V, IC=50mA  
VCE= 1V, IC=250mA  
DC Current Gain  
-
-
-
VCE= 1V, IC=500mA  
Gain-Bandwidth Product  
Output Capacitance  
-
50  
-
fT  
MH  
VCE= 10V, IC= 50mA,f=100MHz  
VCB=10V, f=1MHz  
z
pF  
20  
Cob  
*Pulse width 380 s, Duty Cycle 2%  
µ
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
Page 1 of 2  
01-Jun-2002 Rev. A  
PZT6718  
NPN Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
Page 2 of 2  
01-Jun-2002 Rev. A  
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