PZT772
PNP Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT772 is designed for using
in output stage of 2W amplifier,
voltage regulator, DC-DC converter
and driver.
REF.
REF.
Min.
6.70
2.90
0.02
0̓
Max.
7.30
3.10
0.10
10̓
Min.
13̓TYP.
2.30 REF.
Max.
A
C
D
E
I
B
J
7 7 2
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
-30
-5
V
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
A
IC
Collector Current-Continuous
Total Power Dissipation
-3
W
1.5
PD
O
C
Storage Temperature
-55~-150
Junction and
TJ,
Tstg
ELECTRICAL CHARACTERISTICS Tamb=25ć unlessotherwise specified
Parameter
Symbol
MIN
UNIT
Test conditions
Ic=-100uA
TYP
_
MAX
_
_
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-40
-30
_
_
_
IC= -10 mA
IE= -10uA
_
V
-5
_
uA
Collector cut-off current
Emitter cut-off current
-1
VCB= -30 V
VEB=-3V
_
_
_
IEBO
1
_
uA
_
hFE
30
1
VCE= -2V, IC= -20mA
DC current gain
_
hFE
100
_
160
-0.3
-1
2
VCE=-2V, IC= -1mA
500
-0.5
V
V
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
_
-2
_
VCE=-20V,IC=-20mA,
f = 100MHz
_
_
MHz
Transition frequency
80
f
T
_
Collector output capacitance
Cob
55
VCB=-10V, f=1MHz
pF
CLASSIFICATION OF hFE
2
Rank
Q
P
E
Range
160-320
250-500
100-200
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
