PZT965
NPN Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZT965 is designed for use as
AF output amplifier and flash unit.
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
9 6 5
Date Code
6.30
6.70
6.70
3.70
3.70
1.80
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
20
7
V
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
Collector Current (Peak PT=10mS)
Total Power Dissipation
5
8
2
A
IC
W
PD
O
C
Storage Temperature
Junction and
-55~+150
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
Min
40
Max
Test Conditions
IC= 100µA
IC= 1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
20
-
V
-
V
IE= 10µA
VCB= 60V
7
-
-
0.1
0.1
uA
uA
Emitter-Base Cutoff Current
Collector Saturation Voltage
-
-
IEBO
VEB=
7V
-
0.35
1
800
-
*VCE(sat)
IC=3A,IB=0.1A
V
-
-
*hFE1
*hFE2
230
VCE= 2V, IC=0.5A
VCE= 2V, IC=2 A
DC Current Gain
150
Gain-Bandwidth Product
Output Capacitance
150
-
-
-
-
fT
MH
pF
VCE= 6V, IE= 50mA
VCB= 20V, f=1MHz
z
50
Cob
≦
≦
*Pulse width 300 s, Duty Cycle 2%
µ
Classification of hFE
Rank
R
340~600
Range
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
21-Oct-2009 Rev. B
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