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PZT987A

型号:

PZT987A

描述:

中功率高增益晶体管[ Medium Power High Gain Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

2 页

PDF大小:

905 K

PZT987A  
PNP Silicon Planar  
Elektronische Bauelemente  
Medium Power High Gain Transistor  
RoHS Compliant Product  
SOT-223  
Description  
The PZT987A is designed for battery  
powered circuits and fast charge  
converters.  
Features  
* Gain Of 200 At Ic=2A And Very  
Low Saturation Voltage  
Millimeter  
Min. Max.  
13̓TYP.  
Millimeter  
REF.  
REF.  
Min.  
6.70  
2.90  
0.02  
0̓  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
B
J
2.30 REF.  
9 8 7 A  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
Date Code  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
-25  
-25  
-5  
V
V
V
A
VCEO  
VEBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
-3  
IC  
ICM  
-6  
A
W
2
Total Power Dissipation  
PD  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
*BVCEO  
BVEBO  
ICBO  
Min  
-25  
-25  
Max  
Test Conditions  
IC=-100µA, IE=0  
IC=-10mA, IB=0  
IE=-100µA, IC=0  
VCB=-15V, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-
-
-
-
-
-
-
-
V
V
-5  
-
-100  
-100  
nA  
nA  
Emitter-Base Cutoff Current  
-
IEBO  
VEB=-  
C=0  
4V,I  
-
-
-250  
-450  
*VCE(sat)1  
*VCE(sat)2  
*VCE(sat)3  
-
-
IC=-1A,IB=-10 mA  
IC=-2A,IB=-20mA  
IC=-3A,IB=-100mA  
IC=-1A,IB=-10mA  
IC=-1A,VCE=-2V  
Collector Saturation Voltage  
mV  
-500  
-
-
-
-
Base Saturation Voltage  
Base-Emitter Voltage  
*VBE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
*hFE3  
*hFE4  
fT  
-1  
-
V
V
-0.8  
-
300  
250  
200  
-
-
-
800  
VCE=-2V, IC=-10mA  
-
-
VCE=-2V, IC=-1 A  
VCE=- 2V, IC=-2A  
VCE=- 2V, IC=-6A  
VCE=- 5V, IC=-50mA  
DC Current Gain  
-
-
-
-
-
100  
100  
Gain-Bandwidth Product  
MH  
z
, f=50MHz  
Iutput Capacitance  
Output Capacitance  
225  
25  
pF  
pF  
Cib  
Cob  
Ton  
Toff  
VCB=-0.5V, f=1MHz  
VCB=-10V, f=1MHz  
-
-
-
-
-
-
On-Time  
Off-Time  
35  
nS  
VCC=-10V,IC=-  
,IB1=IB2=- 0mA  
5
500mA  
400  
=
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%  
µ
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
PZT987A  
PNP Silicon Planar  
Elektronische Bauelemente  
Medium Power High Gain Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page2 of 2  
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