SEMICONDUCTOR
PZTA92
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
A
TELEPHONE APPLICATION.
H
L
2
FEATURES
Complementary to PZTA42.
K
E
B
1
3
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
G
F
F
SYMBOL RATING
UNIT
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-300
-300
-5.0
DIM
A
B
MILLIMETERS
1
2
3
_
6.5+0.2
V
C
_
3.5+0.2
C
1.8 MAX
V
D
D
E
0.7+0.15/-0.1
_
+
7
0.3
-500
500
mA
mA
W
F
2.3 TYP
G
H
J
0.26+0.09/-0.02
IE
1. BASE
Emitter Current
3.0+0.15/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
_
1.75+0.25
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
K
L
0.1 MAX
10 MAX
150
Tstg
-55 150
SOT-223
* Package Mounted On FR-4 PCB 36 18 1.5mm. :
mountina pad for the collector lead min.6cm2
Marking
Type Name
PZTA92
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
V(BR)CBO
V(BE)CEO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
-300
-300
25
40
25
-
-
-
-
-
-
-
-
-
-
-
IC=-100 A, IE=0
IC=-1.0mA, IB=0
-
-
V
IC=-1.0mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-30mA, VCE=-10V
IC=-20mA, IB=-2.0mA
IC=-20mA, IB=-2.0mA
* hFE
DC Current Gain
-
-
VCE(sat)
VBE(sat)
fT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-0.5
-0.9
-
V
V
-
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, IE=0, f=1MHz
50
-
MHz
pF
Cob
Collector Output Capacitance
6.0
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2004. 05. 21
Revision No : 0
1/2
