PZTA94
PNP Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZTA94 is designed for application
requires high voltage.
Features
*High Current Gain: IC=300mA at 25 oC
*High Voltage: VCEO=400V (min) at IC=1mA
*Complementary With PZTA44
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
A 9 4
6.30
3.30
3.30
1.40
Date Code
0.60
0.25
0.80
0.35
H
B
C
E
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
-400
-6
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
mA
-500
2
W
Total Power Dissipation
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
t
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min
-400
-400
-6
Max
Test Conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-
-
-
-
-
-
-
V
V
V
IE=-100µA,IC=0
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
ICBO
IEBO
ICES
-
-100
-100
nA
nA
nA
VCB=-400V,IE=0
-
-
-
-
-
VBE=-6 V,IC=0
-500
-350
-500
-750
-750
-
VCE=-400V,VBE=0
IC=- 1mA,IB=-0.1mA
IC=- 10mA,IB=-1 mA
IC=- 50mA,IB=-5 mA
*VCE(sat)1
*VCE(sat)2
-
mV
mV
mV
mV
Collector Saturation Voltage
Base Satruation Voltage
-
-
-
-
-
-
*VCE(sat)3
VBE(sat)
IC=-
10mA,IB=-1 mA
-
-
*hFE1
*hFE2
*hFE3
*hFE4
40
50
45
40
VCE=-10V, IC=-1mA
300
VCE=-10V, IC=-10 mA
VCE=-10V, IC=-50 mA
VCE=-10V, IC=-100mA
DC Current Gain
-
-
-
-
≦
≦
*Pulse width 380 s, Duty Cycle 2%
µ
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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