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FZ600R65KF1

型号:

FZ600R65KF1

描述:

IGBT -模块[ IGBT-Module ]

品牌:

EUPEC[ EUPEC GMBH ]

页数:

10 页

PDF大小:

179 K

Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Tvj=125°C  
6500  
6300  
5800  
Kollektor-Emitter-Sperrspannung  
Tvj=25°C  
VCES  
V
collector-emitter voltage  
Tvj=-40°C  
T
T
C = 80 °C  
C = 25 °C  
IC,nom.  
IC  
600  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
1200  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
1200  
11,4  
+/- 20V  
600  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
1200  
165  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
10,2  
5,1  
Teilentladungs Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)  
VISOL  
kV  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
I
C = 600A, VGE = 15V, Tvj = 25°C  
C = 600A, VGE = 15V, Tvj = 125°C  
VCE sat  
-
4,3  
4,9  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
-
5,3  
5,9  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 100mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
6,4  
7,0  
8,4  
84  
8,1  
V
Gateladung  
gate charge  
VGE = -15V ... +15V  
QG  
-
-
-
µC  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 6300V, VGE = 0V, Tvj = 25°C  
Cies  
-
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
0,6  
60  
mA  
mA  
ICES  
-
V
CE = 6500V, VGE = 0V, Tvj = 125°C  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Dr. Oliver Schilling  
date of publication: 2002-07-05  
revision/Status: Series 1  
approved by: Dr. Schütze 2002-07-05  
1
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 600A, VCE = 3600V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 25°C,  
VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 125°C,  
IC = 600A, VCE = 3600V  
-
-
0,75  
0,72  
-
-
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 25°C,  
VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 125°C,  
IC = 600A, VCE = 3600V  
-
-
0,37  
0,40  
-
-
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 25°C,  
-
-
5,50  
6,00  
-
-
µs  
µs  
VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 125°C,  
IC = 600A, VCE = 3600V  
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 25°C,  
-
-
0,40  
0,50  
-
-
µs  
µs  
VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 125°C,  
IC = 600A, VCE = 3600V, VGE = ±15V  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
RGon = 4,3, CGE=68nF, Tvj = 125°C , Lσ = 280nH  
IC = 600A, VCE = 3600V, VGE = ±15V  
-
-
5900  
3500  
-
-
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
RGoff = 25, CGE=68nF, Tvj = 125°C , Lσ = 280nH  
t
P 10µsec, VGE 15V, acc to appl.note 2002/05  
Vj125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt  
Kurzschlußverhalten  
SC Data  
ISC  
T
-
-
3000  
18  
-
-
A
Modulinduktivität  
stray inductance module  
LσCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
-
0,12  
-
mΩ  
min. typ. max.  
Diode / Diode  
Durchlaßspannung  
forward voltage  
I
I
F = 600A, VGE = 0V, Tvj = 25°C  
F = 600A, VGE = 0V, Tvj = 125°C  
VF  
IRM  
Qr  
3,0  
3,8  
4,6  
V
V
3,9  
4,7  
IF = 600A, - diF/dt = 2000A/µs  
Rückstromspitze  
peak reverse recovery current  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
IF = 600A, - diF/dt = 2000A/µs  
-
-
800  
-
-
A
A
1000  
Sperrverzögerungsladung  
recovered charge  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
IF = 600A, - diF/dt = 2000A/µs  
-
-
550  
-
-
µC  
µC  
1050  
Abschaltenergie pro Puls  
reverse recovery energy  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
Erec  
-
-
660  
-
-
mJ  
mJ  
1600  
2
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
0,011  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
-
-
0,021  
pro Modul / per Module  
Übergangs-Wärmewiderstand  
RthCK  
Tvj, max  
Tvj,op  
Tstg  
-
0,006  
-
K/W  
°C  
thermal resistance, case to heatsink  
λPaste 1 W/m*K / λgrease 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
-
-
-
-
150  
125  
125  
Betriebstemperatur Sperrschicht  
junction operation temperature  
Schaltvorgänge IGBT(RBSOA);Diode(SOA)  
switching operation IGBT(RBSOA);Diode(SOA)  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
AlN  
56  
internal insulation  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
26  
CTI  
>600  
comperative tracking index  
Schraube /screw M6  
M
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
Anschlüsse / terminals M4  
Anschlüsse / terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
M
G
8 - 10  
Gewicht  
weight  
1400  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
VGE = 15V  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
25°C  
125°C  
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
8,0  
9,0  
10,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
IC = f (VCE), VGE= < see inset >  
Tvj = 125°C  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
20V  
15V  
12V  
10V  
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
8,0  
9,0  
10,0  
VCE [V]  
4
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 10V  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
25°C  
125°C  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
I = f (VF)  
F
1300  
1200  
25°C  
125°C  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
VF [V]  
5
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
RGon=4,3, RGoff=25, CGE = 68nF, VGE=±15V, VCE = 3600V, Tvj = 125°C,  
16000  
14000  
Eon  
Eoff  
Erec  
12000  
10000  
8000  
6000  
4000  
2000  
0
0
200  
400  
600  
IC [A]  
800  
1000  
1200  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 600A , VCE = 3600V , VGE=±15V, CGE=68nF , Tvj = 125°C  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
Eon  
Eoff  
Erec  
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48  
RG []  
6
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA) RG,off = 25, CGE=68nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V  
1200  
1000  
Tvj=125°C  
800  
Tvj=25°C  
600  
400  
200  
0
2000  
2500  
3000  
3500  
4000  
4500  
5000  
5500  
6000  
6500  
VCE [V] (at auxiliary terminals)  
Sicherer Arbeitsbereich Diode (SOA)  
safe operation area Diode (SOA)  
Pmax = 1800kW ; Tvj= 125°C  
1200  
1000  
800  
600  
400  
200  
0
0
1000  
2000  
3000  
4000  
5000  
6000  
VR [V] (at auxiliary terminals)  
7
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
0,001  
0,0001  
Zth:Diode  
Zth:IGBT  
0,001  
0,01  
0,1  
1
10  
100  
t [s]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
4,95  
0,030  
9,45  
2,75  
0,66  
2,64  
1,0  
τi [s]  
ri [K/kW]  
τi [s]  
: IGBT  
: Diode  
: Diode  
0,10  
5,25  
0,10  
0,30  
1,26  
0,30  
5,04  
1,0  
0,030  
8
FZ 600 R65 KF1 (final1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 600 R 65 KF1  
Äußere Abmessungen /  
extenal dimensions  
Anschlüsse / Terminals  
1
2
Hilfsemitter / auxiliary emitter  
Gate / gate  
3
Hilfskollektor / auxiliary collector  
Emitter / emitter  
Kollektor / collector  
4,6,8,  
5,7,9  
9
FZ 600 R65 KF1 (final1).xls  
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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