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IXUC200N055

型号:

IXUC200N055

描述:

沟槽功率MOSFET ISOPLUS220[ Trench Power MOSFET ISOPLUS220 ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

56 K

ADVANCED TECHNICAL INFORMATION  
Trench Power MOSFET  
IXUC200N055  
V
= 55 V  
DSS  
ISOPLUS220TM  
I
= 200 A  
= 5.1 mΩ  
D25  
Electrically Isolated Back Surface  
R
DS(on)  
ISOPLUS 220TM  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
S
VDSS  
VGS  
TJ = 25°C to 150°C  
55  
V
V
Continuous  
±20  
Isolated back surface*  
ID25  
ID90  
IS25  
IS90  
ID(RMS)  
EAS  
TC = 25°C; Note 1  
TC = 90°C, Note 1  
200  
160  
A
A
G = Gate,  
S = Source  
D = Drain,  
* Patent pending  
TC = 25°C; Note 1, 2  
TC = 90°C, Note 1, 2  
200  
140  
A
A
Features  
Package lead current limit  
TC = 25°C  
45  
A
mJ  
W
l Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
l Trench MOSFET  
- very low RDS(on)  
- fast switching  
- usable intrinsic reverse diode  
l Low drain to tab capacitance(<15pF)  
l Unclamped Inductive Switching (UIS)  
rated  
500  
300  
PD  
TC = 25°C  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
RMS leads-to-tab, 50/60 Hz, t = 1 minute  
Mounting force  
300  
°C  
VISOL  
FC  
2500  
V~  
11 ... 65 / 2.4 ...11 N/lb  
Applications  
l Automotive 42V and 12V systems  
- electronic switches to replace relays  
and fuses  
Weight  
2
g
- choppers to replace series dropping  
resistors used for motors, heaters, etc.  
- inverters for AC drives, e.g. starter  
generator  
Symbol  
RDS(on)  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
- DC-DC converters, e.g. 12V to 42V, etc.  
l Power supplies  
- DC - DC converters  
min. typ. max.  
VGS = 10 V, ID = 100 A, Note 3  
VGS = 10 V, ID = ID90, Note 3  
5.1 mΩ  
- Solar inverters  
4.0  
0.2  
mΩ  
l Battery powered systems  
- choppers or inverters for motor control  
in hand tools  
VGS(th)  
IDSS  
VDS = VGS, ID = 2 mA  
2
4
V
- battery chargers  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
20 µA  
mA  
Advantages  
l Easy assembly: no screws or isolation  
foils required  
l Space savings  
IGSS  
VGS = ±20 VDC, VDS = 0  
±200  
nA  
l High power density  
98761 (11/00)  
© 2000 IXYS All rights reserved  
IXUC200N055  
ISOPLUS220 OUTLINE  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Qg(on)  
Qgs  
200  
44  
nC  
nC  
nC  
VGS = 10 V, VDS = 14 V, ID = 100 A  
Qgd  
72  
td(on)  
tr  
td(off)  
tf  
35  
115  
230  
155  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS  
ID = 50 A, RG = 4.7 Ω  
,
RthJC  
RthCH  
0.5 K/W  
K/W  
0.30  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VSD  
Test Conditions  
min. typ. max.  
IF = 50 A, VGS = 0 V  
Note 3  
0.9  
80  
1.3  
V
trr  
IF = 150 A, di/dt = -200 A/µs, VDS = 30 V  
ns  
Note: 1. MOSFET chip capability  
2. Intrinsic diode capability  
Note: All terminals are solder plated.  
1 - Gate  
2 - Drain  
3 - Source  
3. Pulse test, t 300 µs, duty cycle d 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

IXYS

IXUC100N055 [ Power Field-Effect Transistor, 100A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, ISOPLUS 220, TO-273, 3 PIN ] 2 页

IXYS

IXUC120N10 沟槽功率MOSFET ISOPLUS220[ Trench Power MOSFET ISOPLUS220 ] 2 页

IXYS

IXUC160N075 沟槽功率MOSFET[ Trench Power MOSFET ] 2 页

IXYS

IXUC60N10 沟槽功率MOSFET ISOPLUS220 -TM[ Trench Power MOSFET ISOPLUS220-TM ] 2 页

IXYS

IXUN280N10 [ Power Field-Effect Transistor, 280A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 ] 2 页

IXYS

IXUN350N10 [ Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 ] 5 页

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