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IXUN350N10

型号：

IXUN350N10

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

286 K

下载PDF手册
IXUN350N10  
VDSSꢀ  
ID25ꢀ  
=ꢀ100ꢀV  
=ꢀ350ꢀA  
TrenchꢀPowerꢀMOSFET  
Very low RDS(on)  
RDS(on) typ.ꢀ =ꢀ 1.9ꢀmΩ  
KS  
D
SOT-227ꢀB,  
G
miniBLOC  
G
KS  
S
S
D
G = Gate, D = Drain,  
S = Source, KS = Kelvin Source  
Features  
MOSFET  
• trench MOSFET  
• very low on state resistance RDSon  
• fast switching  
Symbol  
VDSS  
Conditions  
MaximumꢀRatings  
TVJ = 25°C to ꢀ50°C  
ꢀ00  
20  
V
• fast body diode  
VGS  
V
• industry standard outline  
• isolated package  
• high reliability  
ID25  
ID90  
TC = 25°C; limited by leads  
TC = 90°C  
350  
265  
A
A
ꢀ50  
830  
ID(RMS)  
PD  
Package lead current limit  
TC = 25°C  
A
Applications  
W
• automotive  
• converters for fuel cells  
• AC drives  
• choppers to replace series dropping  
resistors used for motors, heaters etc.  
• DC-DC converters  
• electronic switches  
• replacing relays and fuses  
• power supplies  
Symbol  
Conditions  
CharacteristicꢀValues  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
RDSon  
on chip level: VGS = ꢀ0 V  
ID = ꢀ75 A; pulse test  
t < 300 µs; duty cycle < 2%  
TVJ = 25°C  
TVJ = ꢀ25°C  
ꢀ.9  
4
2.5  
mW  
mW  
Rpinꢀtoꢀchip  
VGS(th)  
IDSS  
RDS = RDS(on) + Rpin to chip  
VDS = VGS; ID = 3 mA  
VDS = VDSS; VGS = 0 V  
0.8  
mW  
• solar inverters  
2
4
V
• battery supplied systems  
• choppers or inverters for motor control  
in hand tools  
TVJ = 25°C  
TVJ = ꢀ25°C  
30  
ꢀ.5  
µA  
mA  
• battery chargers  
±
IGSS  
VGS  
=
ꢀ0 V; VDS = 0 V  
300  
nA  
Advantages  
Ciss  
Coss  
Crss  
27  
3
2
nF  
nF  
nF  
VGS = 0 V; VDS = 25 V; f = ꢀ MHz  
VGS = ꢀ0 V; VDS = 80 V; ID = 300 A  
• Easy to mount  
• Space savings  
• High power density  
Qg  
Qgs  
Qgd  
640  
ꢀ35  
275  
nC  
nC  
nC  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec(off)  
ꢀꢀ5  
ꢀ75  
650  
ꢀ50  
ꢀ.0  
ns  
ns  
ns  
VGS = ꢀ0 V;  
VDS = 50 V;  
ID = 250 A;  
RG = ꢀ.9 Ω (external)  
TVJ = ꢀ25°C  
ns  
mJ  
mJ  
mJ  
3.ꢀ  
0.32  
RthJC  
RthCH  
0.ꢀ8 K/W  
K/W  
with heat transfer paste  
0.06  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070926a  
ꢀ - 5  
IXUN350N10  
SOT-227ꢀB,ꢀminiBLOC  
Source-DrainꢀDiode  
Symbol  
Conditions  
CharacteristicꢀValues  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Millimeter  
ꢀꢀMin. ꢀꢀMax. ꢀꢀꢀMin. ꢀꢀꢀMax.  
3ꢀ.5 3ꢀ.88 ꢀ.24 ꢀ.255  
Inches  
Dim.  
A
B
C
D
E
F
G
H
J
IS  
VGS = 0 V  
300  
550  
ꢀ.3  
A
7.8  
4.09  
4.09  
4.09  
8.2 0.307 0.323  
4.29 0.ꢀ6ꢀ 0.ꢀ69  
4.29 0.ꢀ6ꢀ 0.ꢀ69  
4.29 0.ꢀ6ꢀ 0.ꢀ69  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
A
V
IF = 250 A; VGS = 0 V  
Pulse test, t < 300 µs, duty cycle < 2%  
ꢀ.ꢀ  
ꢀ4.9ꢀ ꢀ5.ꢀꢀ 0.587 0.595  
30.ꢀ2 30.3 ꢀ.ꢀ86 ꢀ.ꢀ93  
37.8 38.23 ꢀ.489 ꢀ.505  
ꢀꢀ.68 ꢀ2.22 0.46 0.48ꢀ  
9.6 0.35ꢀ 0.378  
0.84 0.03 0.033  
trr  
IRM  
QRR  
ꢀ20  
35  
ns  
A
IF = 350 A; -diF /dt = 600 A/µs; VR = 50 V  
2.8  
µC  
Component  
Symbol  
K
L
8.92  
0.76  
Conditions  
MaximumꢀRatings  
M
N
O
P
Q
R
S
T
ꢀ2.6 ꢀ2.85 0.496 0.506  
TVJ  
Tstg  
operating  
storage  
-55...+ꢀ50  
-55...+ꢀ50  
°C  
°C  
25.ꢀ5 25.42  
0.99 ꢀ.00ꢀ  
0.78 0.084  
ꢀ.98  
4.95  
2.ꢀ3  
VISOL  
50/60 Hz, RMS, IISOL < ꢀ mA t = ꢀ min  
t = ꢀ s  
2500  
3000  
V~  
V~  
5.97 0.ꢀ95 0.235  
26.9 ꢀ.045 ꢀ.059  
4.42 0.ꢀ55 0.ꢀ74  
4.85 0.ꢀ86 0.ꢀ9ꢀ  
26.54  
3.94  
Md  
mounting torque  
terminal connection torque  
ꢀ.5  
ꢀ.5  
Nm  
Nm  
4.72  
24.59 25.07 0.968 0.987  
Symbol  
Weight  
Conditions  
CharacteristicꢀValues  
min. typ. max.  
U
V
W
-0.05  
3.3  
ꢀ9.8ꢀ 2ꢀ.08  
0.ꢀ -0.002 0.004  
4.57  
0.ꢀ3  
0.78  
0.ꢀ8  
0.83  
30  
g
Product Marking  
Logo  
Part No.  
abcde  
XXXXXX  
YWWi  
Assembly Code  
DateCode  
Ordering  
Standard  
PartꢀName  
MarkingꢀonꢀProduct DeliveringꢀMode  
IXUN350Nꢀ0 Tube  
BaseꢀQty.  
CodeꢀKey  
IXUN350Nꢀ0  
ꢀ0  
50ꢀ384  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070926a  
2 - 5  
IXUN350N10  
400  
300  
200  
100  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
IDSS = 0.25 mA  
TJ = 125°C  
TJ = 25°C  
5
0
1
2
3
4
6
-25  
0
25  
50  
75 100 125 150  
V
GS [V]  
TJ [°C]  
Fig. ꢀ Drain source breakdown voltage VDSS  
vs. junction temperature TJ  
Fig. 2 Typical transfer characteristic  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
VGS  
=
VGS  
=
TJ = 25°C  
6 V  
6,5 V  
7 V  
10 V  
15 V  
20 V  
5.5 V  
5.5 V  
6 V  
6.5 V  
7 V  
10 V  
15 V  
20 V  
5 V  
5 V  
4.5 V  
4 V  
4.5 V  
4 V  
T
= 125°C  
J
0
1
2
3
0
1
2
3
V
DS [V]  
V
DS [V]  
Fig. 3 Typical output characteristic  
Fig. 4 Typical output characteristic  
4
3
2
1
0
3
2
1
5
4
3
2
1
0
VGS  
=
4 V  
VGS = 10 V  
4,5  
V
5 V  
I
D = 175 A  
TJ = 125°C  
5.5 V  
6 V  
RDS(on)  
6.5 V  
7 V  
10 V  
15 V  
RDS(on) normalized  
20 V  
0
100  
200  
300  
D [A]  
Fig. 6 Drain source on-state  
400  
500  
0
25  
50  
75  
100  
125  
150  
T
J [°C]  
I
Fig. 5 Drain source on-state resistance RDS(on)  
versus junction temperature TJ  
resistance RDS(on) versus ID  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070926a  
3 - 5  
IXUN350N10  
12  
10  
8
400  
300  
200  
100  
0
IC = 300 A  
DS = 80 V  
TJ = 175°C  
V
6
4
2
0
0
200  
400  
600  
G [nC]  
800  
1000  
0
40  
80  
120  
C [°C]  
Fig. 8 Drain current ID vs. case temperature TC  
160  
200  
T
Q
Fig.7 Gate charge characteristic  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
250  
5
4
3
2
1
0
1000  
tr  
VCE = 50 V  
V
GE = +10/0 V  
G = 1.9 :  
200  
150  
100  
50  
800  
600  
400  
200  
0
R
TJ = 125°C  
td(off)  
VCE = 50 V  
VGE = +10/0 V  
RG = 1.9 :  
TJ = 125°C  
td(on)  
tf  
Erec(off)  
Eon  
Eoff  
0
0
50 100 150 200 250 300 350 400  
0
50 100 150 200 250 300 350 400  
I
D [A]  
I
D [A]  
Fig. 9 Typ. turn-on energy & switching times  
vs. collector current, inductive switching  
Fig. ꢀ0 Typ. turn-off energy & switching times  
vs. collector current, inductive switching  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
420  
9
8
7
6
5
4
3
2
1
0
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
360  
td(off)  
tr  
300  
td(on)  
Eon  
240  
VCE = 50 V  
GE = +10/0 V  
D = 350 A  
TJ = 125°C  
Eoff  
V
VCE = 50 V  
180  
I
V
GE = +10/0 V  
I
D = 350 A  
120  
60  
0
TJ = 125°C  
tf  
Erec(off)  
0
2
4
6
8
10  
12  
14  
0
2
4
6
8
10  
12  
14  
R
G [:]  
R
G [:]  
Fig. ꢀꢀ Typ. turn-on energy & switching times  
vs. gate resistor, inductive switching  
Fig. ꢀ2 Typ. turn-off energy & switching times  
vs. gate resistor, inductive switching  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070926a  
4 - 5  
IXUN350N10  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
IF = 75 A  
175 A  
IF = 75 A  
175 A  
350 A  
VR = 50 V  
TJ = 125°C  
350 A  
60  
VR = 50 V  
TJ = 125°C  
40  
20  
0
0
200 400 600 800 1000 1200 1400  
0
200 400 600 800 1000 1200 1400  
-di  
-di  
F/dt [A/µs]  
F /dt [A/µs]  
Fig. ꢀ3 Reverse recovery time trr  
of the body diode vs. di/dt  
Fig. ꢀ4 Reverse recovery current IRM  
of the body diode vs. di/dt  
10  
9
8
7
6
5
4
3
2
1
0
500  
400  
300  
200  
100  
0
VR = 50 V  
TJ = 125°C  
VGS = 0 V  
175 A  
IF = 75 A  
350 A  
TJ = 25°C  
125°C  
150°C  
0
200 400 600 800 1000 1200 1400  
-di  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
F /dt [A/µs]  
V
SD [V]  
Fig. ꢀ5 Reverse recovery charge Qrr  
of the body diode vs. di/dt  
Fig. ꢀ6 Source drain diode current IF vs.  
source drain voltage VSD (body diode)  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
V
GS  
0,9 VGS  
0,1 VGS  
t
VDS  
ID  
0,9 ID  
0,9 ID  
0,1 ID  
td(on)  
0,1 ID  
t
t r  
td(off)  
tf  
IXUN35N10  
1
10  
100  
1000  
10000  
t [ms]  
Fig. ꢀ7  
Definition of switching times  
Fig. ꢀ8 Typ. thermal impedance junction to  
heatsink ZthJH with heat transfer paste  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2007 IXYS All rights reserved  
20070926a  
5 - 5  
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