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IXUC100N055

型号:

IXUC100N055

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

541 K

ADVANCE TECHNICAL INFORMATION  
Trench Power MOSFET IXUC100N055  
ISOPLUS220TM  
VDSS = 55 V  
ID25 = 100 A  
RDS(on)= 7.7 mΩ  
Electrically Isolated Back Surface  
ISOPLUS 220TM  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VGS  
TJ = 25°C to 150°C  
55  
20  
V
V
G
D
Continuous  
S
Isolated back surface*  
D = Drain,  
ID25  
ID90  
IS25  
IS90  
ID(RMS)  
EAS  
TC = 25°C; Note 1  
TC = 90°C, Note 1  
100  
80  
A
A
G = Gate,  
S = Source  
TC = 25°C; Note 1, 2  
TC = 90°C, Note 1, 2  
100  
70  
A
A
* Patent pending  
Features  
Package lead current limit  
TC = 25°C  
50  
A
mJ  
W
Silicon chip on Direct-Copper-Bond  
substrate  
50  
15
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Trench MOSFET  
PD  
TC = 25°C  
TJ  
-5+175  
1
°C  
°C  
°C  
TJM  
Tstg  
- very low RDS(on)  
- fast switching  
-... +125  
- usable intrinsic reverse diode  
Low drain to tab capacitance(<15pF)  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 1
RMS leads-to-tab, 50/60 Hz, t = 1 min
Mounting force with clips  
300  
°C  
V~  
N/lb  
g
VISOL  
FC  
2500  
11 ... 65 / 2.4 ...11  
2
Applications  
Weight  
Automotive 42V and 12V systems  
- electronic switches to replace relays  
& fuses  
- choppers to replace series dropping  
resistors used for motors, heaters, etc.  
- inverters for AC drives  
- DC-DC converters, e.g. 12V to 42V, etc.  
Power supplies  
- DC - DC converters  
- Solar inverters  
Symbol  
RDS(on)  
Test Cition
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VG10 V, ID = ID90, Note 3  
VDS = VGS, ID = 1 mA  
6.1  
0.1  
7.7 mΩ  
Battery powered systems  
- choppers or inverters for motor control in  
hand tools  
VGS(th)  
IDSS  
2
4
V
VDS = V  
10 µA  
VGS = 0DVSS  
TJ = 125°C  
mA  
- battery chargers  
Advantages  
IGSS  
VGS = 20 VDC, VDS = 0  
200  
nA  
Easy assembly: no screws or isolation  
foils required  
Space savings  
High power density  
DS98760(08/03)  
© 2003 IXYS All rights reserved  
IXUC100N055  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS220 Outline  
Qg(on)  
Qgs  
100  
22  
nC  
nC  
nC  
VGS = 10 V, VDS = 14 V, ID = 50 A  
Qgd  
36  
td(on)  
tr  
td(off)  
tf  
35  
115  
230  
155  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS  
ID = 25 A, RG = 10 Ω  
,
RthJC  
RthCH  
1
K/W  
K/W  
0.30  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VSD  
Test Conditions  
min. typ. max.  
IF = 50 A, VGS = 0 V  
Note 3  
0.9  
80  
V
trr  
IF = 75A, di/dt = -100A/µs, VDS = 30 V  
ns  
Note: 1. MOSFET chip capability  
2. Intrinsic diode capability  
3. Pulse test, t 300 µs, duty cycle d 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more  
of the following U.S. patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
6,306,728B1  
6,259,123B1  
6,306,728B1  
6,534,343  
6,404,065B1 6,162,665  
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